DMP2170U-13 Diodes Incorporated
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 20V 3.1A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta)
Rds On (Max) @ Id, Vgs: 90mOhm @ 3.5A, 4.5V
Power Dissipation (Max): 780mW (Ta)
Vgs(th) (Max) @ Id: 1.25V @ 250µA
Supplier Device Package: SOT-23-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 7.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 303 pF @ 10 V
Qualification: AEC-Q101
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Technische Details DMP2170U-13 Diodes Incorporated
Description: MOSFET P-CH 20V 3.1A SOT23, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta), Rds On (Max) @ Id, Vgs: 90mOhm @ 3.5A, 4.5V, Power Dissipation (Max): 780mW (Ta), Vgs(th) (Max) @ Id: 1.25V @ 250µA, Supplier Device Package: SOT-23-3, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 7.8 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 303 pF @ 10 V, Qualification: AEC-Q101.
Weitere Produktangebote DMP2170U-13
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
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DMP2170U-13 | Diodes Incorporated |
MOSFETs MOSFET BVDSS: 8V-24V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3 Stücke Im Einkaufswagen Stück im Wert von UAH |
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DMP2170U-13 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -2.5A; Idm: -13A; 1.28W; SOT23 Case: SOT23 Kind of channel: enhancement Type of transistor: P-MOSFET Mounting: SMD Polarisation: unipolar Drain-source voltage: -20V Pulsed drain current: -13A Drain current: -2.5A Gate charge: 7.8nC On-state resistance: 0.25Ω Power dissipation: 1.28W Gate-source voltage: ±12V Kind of package: 13 inch reel; tape |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| DMP2170U-13 |
|
Hersteller: Diodes Incorporated
MOSFETs MOSFET BVDSS: 8V-24V
MOSFETs MOSFET BVDSS: 8V-24V
Produkt ist nicht verfügbar
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| DMP2170U-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.5A; Idm: -13A; 1.28W; SOT23
Case: SOT23
Kind of channel: enhancement
Type of transistor: P-MOSFET
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: -20V
Pulsed drain current: -13A
Drain current: -2.5A
Gate charge: 7.8nC
On-state resistance: 0.25Ω
Power dissipation: 1.28W
Gate-source voltage: ±12V
Kind of package: 13 inch reel; tape
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.5A; Idm: -13A; 1.28W; SOT23
Case: SOT23
Kind of channel: enhancement
Type of transistor: P-MOSFET
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: -20V
Pulsed drain current: -13A
Drain current: -2.5A
Gate charge: 7.8nC
On-state resistance: 0.25Ω
Power dissipation: 1.28W
Gate-source voltage: ±12V
Kind of package: 13 inch reel; tape
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
Im Einkaufswagen
Stück im Wert von UAH