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DMP21D0UFB-7B

DMP21D0UFB-7B Diodes Incorporated

DMP21D0UFB.pdf Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 8V~24V X1-DFN1006-
Packaging: Tape & Reel (TR)
Package / Case: 3-UFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 770mA (Ta)
Rds On (Max) @ Id, Vgs: 495mOhm @ 400mA, 4.5V
Power Dissipation (Max): 430mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X1-DFN1006-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 76.5 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 90000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10000+0.13 EUR
20000+0.12 EUR
Mindestbestellmenge: 10000
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Technische Details DMP21D0UFB-7B Diodes Incorporated

Description: MOSFET BVDSS: 8V~24V X1-DFN1006-, Packaging: Tape & Reel (TR), Package / Case: 3-UFDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 770mA (Ta), Rds On (Max) @ Id, Vgs: 495mOhm @ 400mA, 4.5V, Power Dissipation (Max): 430mW (Ta), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: X1-DFN1006-3, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 8 V, Input Capacitance (Ciss) (Max) @ Vds: 76.5 pF @ 10 V, Qualification: AEC-Q101.

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DMP21D0UFB-7B DMP21D0UFB-7B Hersteller : Diodes Incorporated DIOD_S_A0007976875_1-2543073.pdf MOSFET 20V P-Ch Enh FET Pd .43W -8Vgss -5.0A
auf Bestellung 14893 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+0.61 EUR
10+0.45 EUR
100+0.20 EUR
1000+0.14 EUR
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DMP21D0UFB-7B DMP21D0UFB-7B Hersteller : Diodes Incorporated DMP21D0UFB.pdf Description: MOSFET BVDSS: 8V~24V X1-DFN1006-
Packaging: Cut Tape (CT)
Package / Case: 3-UFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 770mA (Ta)
Rds On (Max) @ Id, Vgs: 495mOhm @ 400mA, 4.5V
Power Dissipation (Max): 430mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X1-DFN1006-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 76.5 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 93624 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
26+0.69 EUR
43+0.42 EUR
100+0.20 EUR
500+0.19 EUR
1000+0.17 EUR
2000+0.16 EUR
5000+0.14 EUR
Mindestbestellmenge: 26
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DMP21D0UFB-7B DMP21D0UFB-7B Hersteller : Diodes Inc dmp21d0ufb.pdf Trans MOSFET P-CH 20V 1.77A 3-Pin DFN T/R
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DMP21D0UFB-7B Hersteller : DIODES INCORPORATED DMP21D0UFB.pdf DMP21D0UFB-7B SMD P channel transistors
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