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DMP21D0UFB4-7R

DMP21D0UFB4-7R Diodes Incorporated

DMP21D0UFB4.pdf Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 8V~24V X2-DFN1006-
Packaging: Cut Tape (CT)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 770mA (Ta)
Rds On (Max) @ Id, Vgs: 495mOhm @ 400mA, 4.5V
Power Dissipation (Max): 430mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X2-DFN1006-3
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 76.5 pF @ 10 V
auf Bestellung 2800 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
29+0.62 EUR
41+0.43 EUR
100+0.22 EUR
500+0.19 EUR
1000+0.15 EUR
Mindestbestellmenge: 29
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Technische Details DMP21D0UFB4-7R Diodes Incorporated

Description: MOSFET BVDSS: 8V~24V X2-DFN1006-, Packaging: Tape & Reel (TR), Package / Case: 3-XFDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 770mA (Ta), Rds On (Max) @ Id, Vgs: 495mOhm @ 400mA, 4.5V, Power Dissipation (Max): 430mW (Ta), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: X2-DFN1006-3, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 8 V, Input Capacitance (Ciss) (Max) @ Vds: 76.5 pF @ 10 V.

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DMP21D0UFB4-7R Hersteller : Diodes Incorporated DIOD_S_A0009631939_1-2543297.pdf MOSFET MOSFET BVDSS: 8V~24V X2-DFN1006-3 T&R 3K
auf Bestellung 2900 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+0.62 EUR
10+0.46 EUR
100+0.29 EUR
1000+0.15 EUR
3000+0.14 EUR
9000+0.12 EUR
24000+0.11 EUR
Mindestbestellmenge: 5
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DMP21D0UFB4-7R DMP21D0UFB4-7R Hersteller : Diodes Zetex dmp21d0ufb4.pdf Trans MOSFET P-CH 20V 1.17A 3-Pin X2-DFN T/R
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DMP21D0UFB4-7R DMP21D0UFB4-7R Hersteller : Diodes Incorporated DMP21D0UFB4.pdf Description: MOSFET BVDSS: 8V~24V X2-DFN1006-
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 770mA (Ta)
Rds On (Max) @ Id, Vgs: 495mOhm @ 400mA, 4.5V
Power Dissipation (Max): 430mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X2-DFN1006-3
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 76.5 pF @ 10 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH