auf Bestellung 2304000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.12 EUR |
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Technische Details DMP21D0UFD-7 Diodes Zetex
Description: MOSFET P-CH 20V 820MA 3DFN, Packaging: Tape & Reel (TR), Package / Case: 3-UDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 820mA (Ta), Rds On (Max) @ Id, Vgs: 495mOhm @ 800mA, 4.5V, Power Dissipation (Max): 490mW (Ta), Vgs(th) (Max) @ Id: 1.2V @ 250µA, Supplier Device Package: X1-DFN1212-3, Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 3 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 80 pF @ 10 V.
Weitere Produktangebote DMP21D0UFD-7 nach Preis ab 0.088 EUR bis 1.38 EUR
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DMP21D0UFD-7 | Hersteller : Diodes Zetex |
 Trans MOSFET P-CH 20V 1.14A 3-Pin DFN T/R |
auf Bestellung 162000 Stücke: Lieferzeit 14-21 Tag (e) |
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DMP21D0UFD-7 | Hersteller : Diodes Zetex |
Trans MOSFET P-CH 20V 1.14A 3-Pin DFN T/R |
auf Bestellung 162000 Stücke: Lieferzeit 14-21 Tag (e) |
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DMP21D0UFD-7 | Hersteller : Diodes Incorporated |
Description: MOSFET P-CH 20V 820MA 3DFN Packaging: Tape & Reel (TR) Package / Case: 3-UDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 820mA (Ta) Rds On (Max) @ Id, Vgs: 495mOhm @ 800mA, 4.5V Power Dissipation (Max): 490mW (Ta) Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: X1-DFN1212-3 Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 3 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 80 pF @ 10 V |
auf Bestellung 2319000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMP21D0UFD-7 | Hersteller : Diodes Incorporated |
Description: MOSFET P-CH 20V 820MA 3DFN Packaging: Cut Tape (CT) Package / Case: 3-UDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 820mA (Ta) Rds On (Max) @ Id, Vgs: 495mOhm @ 800mA, 4.5V Power Dissipation (Max): 490mW (Ta) Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: X1-DFN1212-3 Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 3 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 80 pF @ 10 V |
auf Bestellung 2319007 Stücke: Lieferzeit 10-14 Tag (e) |
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DMP21D0UFD-7 | Hersteller : Diodes Incorporated |
MOSFET MOSFET BVDSS: 8V-24V X1-DFN1212-3 T&R 3K |
auf Bestellung 2440 Stücke: Lieferzeit 14-28 Tag (e) |
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DMP21D0UFD-7 | Hersteller : Diodes Inc |
Trans MOSFET P-CH 20V 1.14A 3-Pin DFN T/R |
auf Bestellung 162000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMP21D0UFD-7 | Hersteller : DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -820mA; Idm: -4A; 490mW Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -820mA Pulsed drain current: -4A Power dissipation: 490mW Case: X1-DFN1212-3 Gate-source voltage: ±8V On-state resistance: 1.3Ω Mounting: SMD Gate charge: 1.5nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 5 Stücke |
Produkt ist nicht verfügbar |
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| DMP21D0UFD-7 | Hersteller : DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -820mA; Idm: -4A; 490mW Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -820mA Pulsed drain current: -4A Power dissipation: 490mW Case: X1-DFN1212-3 Gate-source voltage: ±8V On-state resistance: 1.3Ω Mounting: SMD Gate charge: 1.5nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |