DMP2200UDW-13 Diodes Incorporated
Hersteller: Diodes Incorporated
Description: MOSFET 2P-CH 20V 0.9A SOT363
Current - Continuous Drain (Id) @ 25°C: 900mA
Drain to Source Voltage (Vdss): 20V
Power - Max: 450mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
Supplier Device Package: SOT-363
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 2.1nC @ 4.5V
Rds On (Max) @ Id, Vgs: 260mOhm @ 880mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 184pF @ 10V
| Anzahl | Preis |
|---|---|
| 10000+ | 0.084 EUR |
| 20000+ | 0.077 EUR |
| 30000+ | 0.073 EUR |
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Technische Details DMP2200UDW-13 Diodes Incorporated
Description: MOSFET 2P-CH 20V 0.9A SOT363, Current - Continuous Drain (Id) @ 25°C: 900mA, Drain to Source Voltage (Vdss): 20V, Power - Max: 450mW, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: 2 P-Channel (Dual), Mounting Type: Surface Mount, Package / Case: 6-TSSOP, SC-88, SOT-363, Packaging: Tape & Reel (TR), Supplier Device Package: SOT-363, Vgs(th) (Max) @ Id: 1.2V @ 250µA, Gate Charge (Qg) (Max) @ Vgs: 2.1nC @ 4.5V, Rds On (Max) @ Id, Vgs: 260mOhm @ 880mA, 4.5V, Input Capacitance (Ciss) (Max) @ Vds: 184pF @ 10V.
Weitere Produktangebote DMP2200UDW-13 nach Preis ab 0.088 EUR bis 0.65 EUR
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DMP2200UDW-13 | Diodes Incorporated |
Description: MOSFET 2P-CH 20V 0.9A SOT363 Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 450mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 900mA Input Capacitance (Ciss) (Max) @ Vds: 184pF @ 10V Rds On (Max) @ Id, Vgs: 260mOhm @ 880mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 2.1nC @ 4.5V Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: SOT-363 |
auf Bestellung 179628 Stücke: Lieferzeit 10-14 Tag (e) |
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DMP2200UDW-13 | Diodes Incorporated |
MOSFETs Dual -20V P-Ch FET 260mOhm -4.5V -0.9A |
auf Bestellung 177487 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMP2200UDW-13 |
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Hersteller: Diodes Incorporated
Description: MOSFET 2P-CH 20V 0.9A SOT363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 450mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 900mA
Input Capacitance (Ciss) (Max) @ Vds: 184pF @ 10V
Rds On (Max) @ Id, Vgs: 260mOhm @ 880mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 2.1nC @ 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SOT-363
Description: MOSFET 2P-CH 20V 0.9A SOT363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 450mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 900mA
Input Capacitance (Ciss) (Max) @ Vds: 184pF @ 10V
Rds On (Max) @ Id, Vgs: 260mOhm @ 880mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 2.1nC @ 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SOT-363
auf Bestellung 179628 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 32+ | 0.56 EUR |
| 52+ | 0.34 EUR |
| 100+ | 0.21 EUR |
| 500+ | 0.16 EUR |
| 1000+ | 0.13 EUR |
| 2000+ | 0.12 EUR |
| 5000+ | 0.11 EUR |
| DMP2200UDW-13 |
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Hersteller: Diodes Incorporated
MOSFETs Dual -20V P-Ch FET 260mOhm -4.5V -0.9A
MOSFETs Dual -20V P-Ch FET 260mOhm -4.5V -0.9A
auf Bestellung 177487 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 5+ | 0.65 EUR |
| 10+ | 0.46 EUR |
| 100+ | 0.19 EUR |
| 1000+ | 0.11 EUR |
| 10000+ | 0.088 EUR |