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DMP2200UFCL-7 Diodes Incorporated


DMP2200UFCL.pdf
Hersteller: Diodes Incorporated
Description: MOSFET 2P-CH 20V 1.7A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UFDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 660mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1.7A
Input Capacitance (Ciss) (Max) @ Vds: 184pF @ 10V
Rds On (Max) @ Id, Vgs: 200mOhm @ 2A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 2.2nC @ 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: U-DFN1616-6 (Type F)
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
3000+0.18 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details DMP2200UFCL-7 Diodes Incorporated

Description: MOSFET 2P-CH 20V 1.7A 6UDFN, Packaging: Tape & Reel (TR), Package / Case: 6-UFDFN Exposed Pad, Mounting Type: Surface Mount, Configuration: 2 P-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 660mW, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 1.7A, Input Capacitance (Ciss) (Max) @ Vds: 184pF @ 10V, Rds On (Max) @ Id, Vgs: 200mOhm @ 2A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 2.2nC @ 4.5V, Vgs(th) (Max) @ Id: 1.2V @ 250µA, Supplier Device Package: U-DFN1616-6 (Type F), Grade: Automotive, Qualification: AEC-Q101.

Weitere Produktangebote DMP2200UFCL-7 nach Preis ab 0.21 EUR bis 1.21 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Preis
DMP2200UFCL-7 DMP2200UFCL-7 Diodes Incorporated DMP2200UFCL.pdf Description: MOSFET 2P-CH 20V 1.7A 6UDFN
Packaging: Cut Tape (CT)
Package / Case: 6-UFDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 660mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1.7A
Input Capacitance (Ciss) (Max) @ Vds: 184pF @ 10V
Rds On (Max) @ Id, Vgs: 200mOhm @ 2A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 2.2nC @ 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: U-DFN1616-6 (Type F)
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3013 Stücke:
Lieferzeit 10-14 Tag (e)
21+0.84 EUR
34+0.52 EUR
100+0.33 EUR
500+0.25 EUR
1000+0.22 EUR
Mindestbestellmenge: 21 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DMP2200UFCL-7 DMP2200UFCL-7 Diodes Incorporated DMP2200UFCL.pdf MOSFETs MOSFET BVDSS: 8V~24V U-DFN1616-6 T&R 3K
auf Bestellung 7 Stücke:
Lieferzeit 10-14 Tag (e)
3+1.21 EUR
10+0.8 EUR
100+0.51 EUR
500+0.34 EUR
1000+0.27 EUR
3000+0.21 EUR
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DMP2200UFCL-7 DMP2200UFCL.pdf
Hersteller: Diodes Incorporated
Description: MOSFET 2P-CH 20V 1.7A 6UDFN
Packaging: Cut Tape (CT)
Package / Case: 6-UFDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 660mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1.7A
Input Capacitance (Ciss) (Max) @ Vds: 184pF @ 10V
Rds On (Max) @ Id, Vgs: 200mOhm @ 2A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 2.2nC @ 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: U-DFN1616-6 (Type F)
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3013 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
21+0.84 EUR
34+0.52 EUR
100+0.33 EUR
500+0.25 EUR
1000+0.22 EUR
Mindestbestellmenge: 21 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DMP2200UFCL-7 DMP2200UFCL.pdf
Hersteller: Diodes Incorporated
MOSFETs MOSFET BVDSS: 8V~24V U-DFN1616-6 T&R 3K
auf Bestellung 7 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
3+1.21 EUR
10+0.8 EUR
100+0.51 EUR
500+0.34 EUR
1000+0.27 EUR
3000+0.21 EUR
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH