auf Bestellung 100000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 10000+ | 0.15 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details DMP22D4UFA-7B Diodes Zetex
Description: MOSFET P-CH 20V 330MA 3DFN0806H4, Packaging: Tape & Reel (TR), Package / Case: 3-XFDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 330mA (Ta), Rds On (Max) @ Id, Vgs: 1.9Ohm @ 100mA, 4.5V, Power Dissipation (Max): 400mW (Ta), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: X2-DFN0806-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 0.4 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 28.7 pF @ 15 V.
Weitere Produktangebote DMP22D4UFA-7B nach Preis ab 0.15 EUR bis 0.59 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
DMP22D4UFA-7B | Hersteller : Diodes Zetex |
 Trans MOSFET P-CH 20V 0.33A 3-Pin X2-DFN T/R |
auf Bestellung 100000 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||
|
|
DMP22D4UFA-7B | Hersteller : Diodes Zetex |
Trans MOSFET P-CH 20V 0.33A 3-Pin X2-DFN T/R |
auf Bestellung 860000 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||
 |
DMP22D4UFA-7B | Hersteller : Diodes Incorporated |
Description: MOSFET P-CH 20V 330MA 3DFN0806H4 Packaging: Tape & Reel (TR) Package / Case: 3-XFDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 330mA (Ta) Rds On (Max) @ Id, Vgs: 1.9Ohm @ 100mA, 4.5V Power Dissipation (Max): 400mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: X2-DFN0806-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 0.4 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 28.7 pF @ 15 V |
auf Bestellung 110000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
|
|
DMP22D4UFA-7B | Hersteller : Diodes Incorporated |
Description: MOSFET P-CH 20V 330MA 3DFN0806H4 Packaging: Cut Tape (CT) Package / Case: 3-XFDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 330mA (Ta) Rds On (Max) @ Id, Vgs: 1.9Ohm @ 100mA, 4.5V Power Dissipation (Max): 400mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: X2-DFN0806-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 0.4 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 28.7 pF @ 15 V |
auf Bestellung 128776 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
 |
DMP22D4UFA-7B | Hersteller : Diodes Incorporated |
MOSFET MOSFET BVDSS: 8V-24V X2-DFN0806-3 T&R 10 |
auf Bestellung 33066 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
|
|
DMP22D4UFA-7B | Hersteller : Diodes Zetex |
Trans MOSFET P-CH 20V 0.33A 3-Pin X2-DFN T/R |
Produkt ist nicht verfügbar |
|||||||||||||
| DMP22D4UFA-7B | Hersteller : DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -310mA; Idm: -0.8A; 400mW Power dissipation: 0.4W Case: X2-DFN0806-3 Mounting: SMD Kind of package: reel; tape Type of transistor: P-MOSFET Polarisation: unipolar Gate charge: 0.4nC Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: -0.8A Drain-source voltage: -20V Drain current: -310mA On-state resistance: 5Ω Anzahl je Verpackung: 10000 Stücke |
Produkt ist nicht verfügbar |
||||||||||||||
| DMP22D4UFA-7B | Hersteller : DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -310mA; Idm: -0.8A; 400mW Power dissipation: 0.4W Case: X2-DFN0806-3 Mounting: SMD Kind of package: reel; tape Type of transistor: P-MOSFET Polarisation: unipolar Gate charge: 0.4nC Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: -0.8A Drain-source voltage: -20V Drain current: -310mA On-state resistance: 5Ω |
Produkt ist nicht verfügbar |