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Technische Details DMP22M2UPS-13 Diodes Zetex
Description: MOSFET P-CH 20V 60A PWRDI5060-8, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 60A (Tc), Rds On (Max) @ Id, Vgs: 2.5mOhm @ 25A, 10V, Power Dissipation (Max): 2.3W (Ta), Vgs(th) (Max) @ Id: 1.4V @ 250µA, Supplier Device Package: PowerDI5060-8 (Type K), Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 476 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 12826 pF @ 10 V.
Weitere Produktangebote DMP22M2UPS-13 nach Preis ab 1.38 EUR bis 5.13 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||
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DMP22M2UPS-13 | Diodes Zetex |
Trans MOSFET P-CH 20V 42A 8-Pin PowerDI EP T/R |
auf Bestellung 50000 Stücke: Lieferzeit 14-21 Tag (e) |
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DMP22M2UPS-13 | Diodes Zetex |
Trans MOSFET P-CH 20V 42A 8-Pin PowerDI EP T/R |
auf Bestellung 50000 Stücke: Lieferzeit 14-21 Tag (e) |
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DMP22M2UPS-13 | Diodes Incorporated |
Description: MOSFET P-CH 20V 60A PWRDI5060-8Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 2.5mOhm @ 25A, 10V Power Dissipation (Max): 2.3W (Ta) Vgs(th) (Max) @ Id: 1.4V @ 250µA Supplier Device Package: PowerDI5060-8 (Type K) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 476 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 12826 pF @ 10 V |
auf Bestellung 100000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMP22M2UPS-13 | Diodes Incorporated |
Description: MOSFET P-CH 20V 60A PWRDI5060-8Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 2.5mOhm @ 25A, 10V Power Dissipation (Max): 2.3W (Ta) Vgs(th) (Max) @ Id: 1.4V @ 250µA Supplier Device Package: PowerDI5060-8 (Type K) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 476 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 12826 pF @ 10 V |
auf Bestellung 100000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMP22M2UPS-13 | Diodes Incorporated |
MOSFETs 20V P-Ch Enh FET 12Vgss PPAP |
auf Bestellung 1656 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMP22M2UPS-13 |
![]() |
Hersteller: Diodes Zetex
Trans MOSFET P-CH 20V 42A 8-Pin PowerDI EP T/R
Trans MOSFET P-CH 20V 42A 8-Pin PowerDI EP T/R
auf Bestellung 50000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2500+ | 1.55 EUR |
| 5000+ | 1.49 EUR |
| 10000+ | 1.43 EUR |
| DMP22M2UPS-13 |
![]() |
Hersteller: Diodes Zetex
Trans MOSFET P-CH 20V 42A 8-Pin PowerDI EP T/R
Trans MOSFET P-CH 20V 42A 8-Pin PowerDI EP T/R
auf Bestellung 50000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2500+ | 1.55 EUR |
| 5000+ | 1.46 EUR |
| 10000+ | 1.38 EUR |
| DMP22M2UPS-13 |
![]() |
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 20V 60A PWRDI5060-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 25A, 10V
Power Dissipation (Max): 2.3W (Ta)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type K)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 476 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12826 pF @ 10 V
Description: MOSFET P-CH 20V 60A PWRDI5060-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 25A, 10V
Power Dissipation (Max): 2.3W (Ta)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type K)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 476 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12826 pF @ 10 V
auf Bestellung 100000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2500+ | 1.61 EUR |
| DMP22M2UPS-13 |
![]() |
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 20V 60A PWRDI5060-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 25A, 10V
Power Dissipation (Max): 2.3W (Ta)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type K)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 476 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12826 pF @ 10 V
Description: MOSFET P-CH 20V 60A PWRDI5060-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 25A, 10V
Power Dissipation (Max): 2.3W (Ta)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type K)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 476 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12826 pF @ 10 V
auf Bestellung 100000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 6+ | 3.71 EUR |
| 10+ | 3.08 EUR |
| 100+ | 2.45 EUR |
| 500+ | 2.07 EUR |
| 1000+ | 1.76 EUR |
| DMP22M2UPS-13 |
![]() |
Hersteller: Diodes Incorporated
MOSFETs 20V P-Ch Enh FET 12Vgss PPAP
MOSFETs 20V P-Ch Enh FET 12Vgss PPAP
auf Bestellung 1656 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 5.13 EUR |
| 10+ | 3.33 EUR |
| 100+ | 2.28 EUR |
| 500+ | 1.89 EUR |
| 1000+ | 1.76 EUR |




