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DMP2541UCB9-7

DMP2541UCB9-7 Diodes Incorporated


DIOD_S_A0004887691_1-2542509.pdf
Hersteller: Diodes Incorporated
MOSFET MOSFET BVDSS: 25V~30V U-WLB1515-9 T&R 3K
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Technische Details DMP2541UCB9-7 Diodes Incorporated

Description: MOSFET P-CH 25V 3.9A U-WLB1515-9, Mounting Type: Surface Mount, Package / Case: 9-UFBGA, WLBGA, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 850 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 4.5 V, Drain to Source Voltage (Vdss): 25 V, Vgs (Max): -6V, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Supplier Device Package: U-WLB1515-9, Vgs(th) (Max) @ Id: 1.1V @ 250µA, Power Dissipation (Max): 940mW (Ta), Rds On (Max) @ Id, Vgs: 40mOhm @ 2A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 3.9A (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 155°C (TJ).

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DMP2541UCB9-7 Diodes Incorporated Description: MOSFET P-CH 25V 3.9A U-WLB1515-9
Mounting Type: Surface Mount
Package / Case: 9-UFBGA, WLBGA
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 850 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 4.5 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): -6V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Supplier Device Package: U-WLB1515-9
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Power Dissipation (Max): 940mW (Ta)
Rds On (Max) @ Id, Vgs: 40mOhm @ 2A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.9A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 155°C (TJ)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DMP2541UCB9-7
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 25V 3.9A U-WLB1515-9
Mounting Type: Surface Mount
Package / Case: 9-UFBGA, WLBGA
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 850 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 4.5 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): -6V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Supplier Device Package: U-WLB1515-9
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Power Dissipation (Max): 940mW (Ta)
Rds On (Max) @ Id, Vgs: 40mOhm @ 2A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.9A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 155°C (TJ)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH