DMP26M1UFG-7 Diodes Incorporated
Hersteller: Diodes IncorporatedDescription: MOSFET BVDSS: 8V~24V POWERDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 71A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 15A, 4.5V
Power Dissipation (Max): 1.67W (Ta), 3W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: PowerDI3333-8
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 164 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5392 pF @ 10 V
auf Bestellung 56000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2000+ | 0.53 EUR |
| 4000+ | 0.49 EUR |
| 6000+ | 0.47 EUR |
| 10000+ | 0.45 EUR |
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Technische Details DMP26M1UFG-7 Diodes Incorporated
Description: MOSFET BVDSS: 8V~24V POWERDI3333, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 71A (Tc), Rds On (Max) @ Id, Vgs: 5.5mOhm @ 15A, 4.5V, Power Dissipation (Max): 1.67W (Ta), 3W (Tc), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: PowerDI3333-8, Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V, Vgs (Max): ±10V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 164 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5392 pF @ 10 V.
Weitere Produktangebote DMP26M1UFG-7 nach Preis ab 0.58 EUR bis 1.99 EUR
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DMP26M1UFG-7 | Hersteller : Diodes Incorporated |
Description: MOSFET BVDSS: 8V~24V POWERDI3333 Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 71A (Tc) Rds On (Max) @ Id, Vgs: 5.5mOhm @ 15A, 4.5V Power Dissipation (Max): 1.67W (Ta), 3W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: PowerDI3333-8 Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 164 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5392 pF @ 10 V |
auf Bestellung 57960 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMP26M1UFG-7 | Hersteller : Diodes Inc |
MOSFET BVDSS: 8V24V PowerDI3333-8 T&R 2K |
Produkt ist nicht verfügbar |
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| DMP26M1UFG-7 | Hersteller : DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -56A; Idm: -110A; 3W Case: PowerDI3333-8 Drain-source voltage: -20V Drain current: -56A On-state resistance: 17mΩ Type of transistor: P-MOSFET Power dissipation: 3W Polarisation: unipolar Kind of package: 7 inch reel; tape Gate charge: 164nC Kind of channel: enhancement Gate-source voltage: ±10V Pulsed drain current: -110A Mounting: SMD Anzahl je Verpackung: 2000 Stücke |
Produkt ist nicht verfügbar |
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| DMP26M1UFG-7 | Hersteller : DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -56A; Idm: -110A; 3W Case: PowerDI3333-8 Drain-source voltage: -20V Drain current: -56A On-state resistance: 17mΩ Type of transistor: P-MOSFET Power dissipation: 3W Polarisation: unipolar Kind of package: 7 inch reel; tape Gate charge: 164nC Kind of channel: enhancement Gate-source voltage: ±10V Pulsed drain current: -110A Mounting: SMD |
Produkt ist nicht verfügbar |