DMP3007LK3-13 Diodes Incorporated
Hersteller: Diodes IncorporatedDescription: MOSFET P-CH 30V 18.5A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 18.5A (Ta)
Rds On (Max) @ Id, Vgs: 7mOhm @ 17A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 64.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2826 pF @ 15 V
auf Bestellung 40000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2500+ | 0.57 EUR |
| 5000+ | 0.54 EUR |
| 12500+ | 0.5 EUR |
| 25000+ | 0.49 EUR |
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Technische Details DMP3007LK3-13 Diodes Incorporated
Description: MOSFET P-CH 30V 18.5A TO252, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 18.5A (Ta), Rds On (Max) @ Id, Vgs: 7mOhm @ 17A, 10V, Power Dissipation (Max): 1.5W (Ta), Vgs(th) (Max) @ Id: 2.8V @ 250µA, Supplier Device Package: TO-252 (DPAK), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 64.2 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2826 pF @ 15 V.
Weitere Produktangebote DMP3007LK3-13 nach Preis ab 0.53 EUR bis 1.48 EUR
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DMP3007LK3-13 | Hersteller : Diodes Incorporated |
MOSFET MOSFET BVDSS: 25V-30V |
auf Bestellung 11186 Stücke: Lieferzeit 10-14 Tag (e) |
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DMP3007LK3-13 | Hersteller : Diodes Incorporated |
Description: MOSFET P-CH 30V 18.5A TO252 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 18.5A (Ta) Rds On (Max) @ Id, Vgs: 7mOhm @ 17A, 10V Power Dissipation (Max): 1.5W (Ta) Vgs(th) (Max) @ Id: 2.8V @ 250µA Supplier Device Package: TO-252 (DPAK) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 64.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2826 pF @ 15 V |
auf Bestellung 43174 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMP3007LK3-13 | Hersteller : DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -15A; Idm: -250A; 3W; TO252 Mounting: SMD Kind of package: reel; tape Case: TO252 Power dissipation: 3W Drain-source voltage: -30V Drain current: -15A On-state resistance: 10mΩ Type of transistor: P-MOSFET Polarisation: unipolar Gate charge: 64.2nC Kind of channel: enhanced Gate-source voltage: ±25V Pulsed drain current: -250A Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
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| DMP3007LK3-13 | Hersteller : DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -15A; Idm: -250A; 3W; TO252 Mounting: SMD Kind of package: reel; tape Case: TO252 Power dissipation: 3W Drain-source voltage: -30V Drain current: -15A On-state resistance: 10mΩ Type of transistor: P-MOSFET Polarisation: unipolar Gate charge: 64.2nC Kind of channel: enhanced Gate-source voltage: ±25V Pulsed drain current: -250A |
Produkt ist nicht verfügbar |