DMP3008SFG-13 DIODES INCORPORATED
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -9.3A; Idm: -80A; 2.2W
Drain-source voltage: -30V
Drain current: -9.3A
On-state resistance: 25mΩ
Type of transistor: P-MOSFET
Power dissipation: 2.2W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 47nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -80A
Mounting: SMD
Case: PowerDI3333-8
Anzahl je Verpackung: 3000 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -9.3A; Idm: -80A; 2.2W
Drain-source voltage: -30V
Drain current: -9.3A
On-state resistance: 25mΩ
Type of transistor: P-MOSFET
Power dissipation: 2.2W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 47nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -80A
Mounting: SMD
Case: PowerDI3333-8
Anzahl je Verpackung: 3000 Stücke
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Technische Details DMP3008SFG-13 DIODES INCORPORATED
Category: SMD P channel transistors, Description: Transistor: P-MOSFET; unipolar; -30V; -9.3A; Idm: -80A; 2.2W, Drain-source voltage: -30V, Drain current: -9.3A, On-state resistance: 25mΩ, Type of transistor: P-MOSFET, Power dissipation: 2.2W, Polarisation: unipolar, Kind of package: reel; tape, Gate charge: 47nC, Kind of channel: enhanced, Gate-source voltage: ±20V, Pulsed drain current: -80A, Mounting: SMD, Case: PowerDI3333-8, Anzahl je Verpackung: 3000 Stücke.
Weitere Produktangebote DMP3008SFG-13
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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DMP3008SFG-13 | Hersteller : Diodes Incorporated | Description: MOSFET P-CH 30V 8.6A PWRDI3333-8 |
Produkt ist nicht verfügbar |
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DMP3008SFG-13 | Hersteller : Diodes Incorporated | MOSFET MOSFET BVDSS: 25V-30 PowerDI3333-8 T&R 3K |
Produkt ist nicht verfügbar |
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DMP3008SFG-13 | Hersteller : DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -9.3A; Idm: -80A; 2.2W Drain-source voltage: -30V Drain current: -9.3A On-state resistance: 25mΩ Type of transistor: P-MOSFET Power dissipation: 2.2W Polarisation: unipolar Kind of package: reel; tape Gate charge: 47nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -80A Mounting: SMD Case: PowerDI3333-8 |
Produkt ist nicht verfügbar |