DMP3010LK3Q-13 Diodes Incorporated
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 30V 17A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta)
Rds On (Max) @ Id, Vgs: 8mOhm @ 10A, 10V
Power Dissipation (Max): 1.7W (Ta)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: TO-252-3
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 59.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 6234 pF @ 15 V
Qualification: AEC-Q101
| Anzahl | Privatkunde |
|---|---|
| 2500+ | 0.71 EUR |
| 5000+ | 0.7 EUR |
| 7500+ | 0.68 EUR |
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Technische Details DMP3010LK3Q-13 Diodes Incorporated
Description: MOSFET P-CH 30V 17A TO252, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 17A (Ta), Rds On (Max) @ Id, Vgs: 8mOhm @ 10A, 10V, Power Dissipation (Max): 1.7W (Ta), Vgs(th) (Max) @ Id: 2.1V @ 250µA, Supplier Device Package: TO-252-3, Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 59.2 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 6234 pF @ 15 V, Qualification: AEC-Q101.
Weitere Produktangebote DMP3010LK3Q-13 nach Preis ab 0.82 EUR bis 2.48 EUR
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DMP3010LK3Q-13 | Diodes Incorporated |
MOSFETs P-Ch Enh Mode FET 30V 20Vgs |
auf Bestellung 4228 Stücke: Lieferzeit 10-14 Tag (e) |
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DMP3010LK3Q-13 | Diodes Incorporated |
Description: MOSFET P-CH 30V 17A TO252 Qualification: AEC-Q101 Grade: Automotive Input Capacitance (Ciss) (Max) @ Vds: 6234 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 59.2 nC @ 4.5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: TO-252-3 Vgs(th) (Max) @ Id: 2.1V @ 250µA Power Dissipation (Max): 1.7W (Ta) Rds On (Max) @ Id, Vgs: 8mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 17A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) |
auf Bestellung 100372 Stücke: Lieferzeit 10-14 Tag (e) |
|
| DMP3010LK3Q-13 |
|
Hersteller: Diodes Incorporated
MOSFETs P-Ch Enh Mode FET 30V 20Vgs
MOSFETs P-Ch Enh Mode FET 30V 20Vgs
auf Bestellung 4228 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 2.45 EUR |
| 10+ | 1.63 EUR |
| 100+ | 1.19 EUR |
| 500+ | 0.95 EUR |
| 1000+ | 0.84 EUR |
| DMP3010LK3Q-13 |
|
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 30V 17A TO252
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 6234 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 59.2 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TO-252-3
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Power Dissipation (Max): 1.7W (Ta)
Rds On (Max) @ Id, Vgs: 8mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 17A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Description: MOSFET P-CH 30V 17A TO252
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 6234 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 59.2 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TO-252-3
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Power Dissipation (Max): 1.7W (Ta)
Rds On (Max) @ Id, Vgs: 8mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 17A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
auf Bestellung 100372 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 9+ | 2.48 EUR |
| 13+ | 1.65 EUR |
| 100+ | 1.11 EUR |
| 500+ | 0.89 EUR |
| 1000+ | 0.82 EUR |