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DMP3010LPS-13 Diodes Incorporated


DMP3010LPS.pdf
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 30V 14.5A PWRDI5060
Input Capacitance (Ciss) (Max) @ Vds: 6234 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 126.2 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PowerDI5060-8
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Power Dissipation (Max): 2.18W (Ta)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 14.5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
auf Bestellung 72500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
2500+0.72 EUR
5000+0.67 EUR
7500+0.66 EUR
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details DMP3010LPS-13 Diodes Incorporated

Description: MOSFET P-CH 30V 14.5A PWRDI5060, Input Capacitance (Ciss) (Max) @ Vds: 6234 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 126.2 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: PowerDI5060-8, Vgs(th) (Max) @ Id: 2.1V @ 250µA, Power Dissipation (Max): 2.18W (Ta), Rds On (Max) @ Id, Vgs: 7.5mOhm @ 10A, 10V, Current - Continuous Drain (Id) @ 25°C: 14.5A (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerTDFN, Packaging: Tape & Reel (TR).

Weitere Produktangebote DMP3010LPS-13 nach Preis ab 0.81 EUR bis 2.66 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Preis
DMP3010LPS-13 DMP3010LPS-13 Diodes Incorporated DMP3010LPS.pdf Description: MOSFET P-CH 30V 14.5A PWRDI5060
Input Capacitance (Ciss) (Max) @ Vds: 6234 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 126.2 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PowerDI5060-8
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Power Dissipation (Max): 2.18W (Ta)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 14.5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
auf Bestellung 74750 Stücke:
Lieferzeit 10-14 Tag (e)
7+2.66 EUR
11+1.68 EUR
100+1.12 EUR
500+0.88 EUR
1000+0.81 EUR
Mindestbestellmenge: 7 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DMP3010LPS-13 DMP3010LPS-13 Diodes Incorporated ds32239-310945.pdf MOSFET P-CH -30V VBR 1KV 2.18W PD Min RDS
auf Bestellung 18 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
DMP3010LPS-13 DMP3010LPS.pdf
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 30V 14.5A PWRDI5060
Input Capacitance (Ciss) (Max) @ Vds: 6234 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 126.2 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PowerDI5060-8
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Power Dissipation (Max): 2.18W (Ta)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 14.5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
auf Bestellung 74750 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
7+2.66 EUR
11+1.68 EUR
100+1.12 EUR
500+0.88 EUR
1000+0.81 EUR
Mindestbestellmenge: 7 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DMP3010LPS-13 ds32239-310945.pdf
Hersteller: Diodes Incorporated
MOSFET P-CH -30V VBR 1KV 2.18W PD Min RDS
auf Bestellung 18 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH