DMP3011SFVW-7 Diodes Incorporated
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 25V~30V POWERDI333
Input Capacitance (Ciss) (Max) @ Vds: 2380 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerDI3333-8
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 980mW (Ta)
Rds On (Max) @ Id, Vgs: 10mOhm @ 11.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 19.8A (Ta), 50A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
| Anzahl | Preis |
|---|---|
| 2000+ | 0.43 EUR |
| 4000+ | 0.39 EUR |
| 6000+ | 0.38 EUR |
| 10000+ | 0.36 EUR |
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Technische Details DMP3011SFVW-7 Diodes Incorporated
Description: MOSFET BVDSS: 25V~30V POWERDI333, Input Capacitance (Ciss) (Max) @ Vds: 2380 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±25V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: PowerDI3333-8, Vgs(th) (Max) @ Id: 3V @ 250µA, Power Dissipation (Max): 980mW (Ta), Rds On (Max) @ Id, Vgs: 10mOhm @ 11.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 19.8A (Ta), 50A (Tc), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerVDFN, Packaging: Tape & Reel (TR).
Weitere Produktangebote DMP3011SFVW-7 nach Preis ab 0.35 EUR bis 1.65 EUR
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DMP3011SFVW-7 | Hersteller : Diodes Incorporated |
Description: MOSFET BVDSS: 25V~30V POWERDI333 Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 2380 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±25V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: PowerDI3333-8 Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 980mW (Ta) Rds On (Max) @ Id, Vgs: 10mOhm @ 11.5A, 10V Current - Continuous Drain (Id) @ 25°C: 19.8A (Ta), 50A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN |
auf Bestellung 11898 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMP3011SFVW-7 | Hersteller : Diodes Incorporated |
MOSFETs MOSFET BVDSS: 25V-30V PowerDI3333-8 T&R 2K |
auf Bestellung 1847 Stücke: Lieferzeit 10-14 Tag (e) |
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