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DMP3011SFVWQ-7

DMP3011SFVWQ-7 Diodes Incorporated

DMP3011SFVWQ.pdf Hersteller: Diodes Incorporated
Description: MOSFET P-CH 30V 11.5A PWRDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 19.8A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 11.5A, 10V
Power Dissipation (Max): 980mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2380 pF @ 15 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2000+0.48 EUR
Mindestbestellmenge: 2000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details DMP3011SFVWQ-7 Diodes Incorporated

Description: MOSFET P-CH 30V 11.5A PWRDI3333, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 19.8A (Ta), 50A (Tc), Rds On (Max) @ Id, Vgs: 10mOhm @ 11.5A, 10V, Power Dissipation (Max): 980mW (Ta), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: PowerDI3333-8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2380 pF @ 15 V, Grade: Automotive, Qualification: AEC-Q101.

Weitere Produktangebote DMP3011SFVWQ-7 nach Preis ab 0.45 EUR bis 1.81 EUR

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DMP3011SFVWQ-7 DMP3011SFVWQ-7 Hersteller : Diodes Incorporated DMP3011SFVWQ.pdf Description: MOSFET P-CH 30V 11.5A PWRDI3333
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 19.8A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 11.5A, 10V
Power Dissipation (Max): 980mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2380 pF @ 15 V
Qualification: AEC-Q101
auf Bestellung 2113 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10+1.81 EUR
16+1.14 EUR
100+0.76 EUR
500+0.60 EUR
1000+0.54 EUR
Mindestbestellmenge: 10
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DMP3011SFVWQ-7 Hersteller : Diodes Incorporated DMP3011SFVWQ.pdf MOSFETs MOSFET BVDSS: 25V-30V PowerDI3333-8 T&R 2K
auf Bestellung 40 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+1.51 EUR
10+1.01 EUR
100+0.70 EUR
500+0.56 EUR
1000+0.51 EUR
2000+0.47 EUR
4000+0.45 EUR
Mindestbestellmenge: 2
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DMP3011SFVWQ-7 Hersteller : DIODES INCORPORATED DMP3011SFVWQ.pdf DMP3011SFVWQ-7 SMD P channel transistors
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