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Technische Details DMP3011SSS-13 Diodes Zetex
Description: MOSFET BVDSS: 25V~30V SO-8 T&R 2, Input Capacitance (Ciss) (Max) @ Vds: 2380 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±25V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: 8-SO, Vgs(th) (Max) @ Id: 3V @ 250µA, Power Dissipation (Max): 1.4W (Ta), Rds On (Max) @ Id, Vgs: 10mOhm @ 11.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 32A (Tc), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Tape & Reel (TR).
Weitere Produktangebote DMP3011SSS-13 nach Preis ab 0.56 EUR bis 2.12 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||
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DMP3011SSS-13 | Diodes Incorporated |
 Description: MOSFET BVDSS: 25V~30V SO-8 T&R 2Input Capacitance (Ciss) (Max) @ Vds: 2380 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±25V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: 8-SO Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 1.4W (Ta) Rds On (Max) @ Id, Vgs: 10mOhm @ 11.5A, 10V Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 32A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) |
auf Bestellung 10000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMP3011SSS-13 | Diodes Incorporated |
MOSFETs MOSFET BVDSS: 25V~30V SO-8 T and R 2.5K |
auf Bestellung 2028 Stücke: Lieferzeit 10-14 Tag (e) |
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DMP3011SSS-13 | Diodes Incorporated |
Description: MOSFET BVDSS: 25V~30V SO-8 T&R 2 Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±25V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: 8-SO Input Capacitance (Ciss) (Max) @ Vds: 2380 pF @ 15 V Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 1.4W (Ta) Rds On (Max) @ Id, Vgs: 10mOhm @ 11.5A, 10V Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 32A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) |
auf Bestellung 13435 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMP3011SSS-13 |
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Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 25V~30V SO-8 T&R 2
Input Capacitance (Ciss) (Max) @ Vds: 2380 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.4W (Ta)
Rds On (Max) @ Id, Vgs: 10mOhm @ 11.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 32A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Description: MOSFET BVDSS: 25V~30V SO-8 T&R 2
Input Capacitance (Ciss) (Max) @ Vds: 2380 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.4W (Ta)
Rds On (Max) @ Id, Vgs: 10mOhm @ 11.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 32A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2500+ | 0.63 EUR |
| 5000+ | 0.58 EUR |
| 7500+ | 0.56 EUR |
| DMP3011SSS-13 |
|
Hersteller: Diodes Incorporated
MOSFETs MOSFET BVDSS: 25V~30V SO-8 T and R 2.5K
MOSFETs MOSFET BVDSS: 25V~30V SO-8 T and R 2.5K
auf Bestellung 2028 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 2.01 EUR |
| 10+ | 1.55 EUR |
| 100+ | 1.02 EUR |
| 500+ | 0.8 EUR |
| 1000+ | 0.73 EUR |
| 2500+ | 0.63 EUR |
| 5000+ | 0.58 EUR |
| DMP3011SSS-13 |
|
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 25V~30V SO-8 T&R 2
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-SO
Input Capacitance (Ciss) (Max) @ Vds: 2380 pF @ 15 V
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.4W (Ta)
Rds On (Max) @ Id, Vgs: 10mOhm @ 11.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 32A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Description: MOSFET BVDSS: 25V~30V SO-8 T&R 2
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-SO
Input Capacitance (Ciss) (Max) @ Vds: 2380 pF @ 15 V
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.4W (Ta)
Rds On (Max) @ Id, Vgs: 10mOhm @ 11.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 32A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
auf Bestellung 13435 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 10+ | 2.12 EUR |
| 14+ | 1.55 EUR |
| 100+ | 1.02 EUR |
| 500+ | 0.8 EUR |
| 1000+ | 0.73 EUR |