![DMP3021SFVWQ-13 DMP3021SFVWQ-13](https://mm.digikey.com/Volume0/opasdata/d220001/medias/images/321/31;-PowerDI3333-8(SWP)Type-UX;-;-8.jpg)
DMP3021SFVWQ-13 Diodes Incorporated
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Description: MOSFET P-CH 30V 9.8A PWRDI3333-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 42A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 8A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1799 pF @ 15 V
auf Bestellung 1629 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
16+ | 1.13 EUR |
19+ | 0.97 EUR |
100+ | 0.67 EUR |
500+ | 0.56 EUR |
1000+ | 0.48 EUR |
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Technische Details DMP3021SFVWQ-13 Diodes Incorporated
Description: MOSFET P-CH 30V 9.8A PWRDI3333-8, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Wettable Flank, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 42A (Tc), Rds On (Max) @ Id, Vgs: 15mOhm @ 8A, 10V, Power Dissipation (Max): 1W (Ta), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: PowerDI3333-8 (SWP) Type UX, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 5V, 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1799 pF @ 15 V.
Weitere Produktangebote DMP3021SFVWQ-13 nach Preis ab 0.4 EUR bis 1.13 EUR
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DMP3021SFVWQ-13 | Hersteller : Diodes Incorporated |
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auf Bestellung 2950 Stücke: Lieferzeit 10-14 Tag (e) |
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DMP3021SFVWQ-13 | Hersteller : Diodes Inc |
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Produkt ist nicht verfügbar |
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DMP3021SFVWQ-13 | Hersteller : DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -30V; -9A; Idm: -128A; 2.5W Mounting: SMD Case: PowerDI3333-8 Power dissipation: 2.5W Polarisation: unipolar Kind of package: reel; tape Gate charge: 34nC Kind of channel: enhanced Gate-source voltage: ±25V Pulsed drain current: -128A Drain-source voltage: -30V Drain current: -9A On-state resistance: 25mΩ Type of transistor: P-MOSFET Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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DMP3021SFVWQ-13 | Hersteller : Diodes Incorporated |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 42A (Tc) Rds On (Max) @ Id, Vgs: 15mOhm @ 8A, 10V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerDI3333-8 (SWP) Type UX Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1799 pF @ 15 V |
Produkt ist nicht verfügbar |
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DMP3021SFVWQ-13 | Hersteller : DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -30V; -9A; Idm: -128A; 2.5W Mounting: SMD Case: PowerDI3333-8 Power dissipation: 2.5W Polarisation: unipolar Kind of package: reel; tape Gate charge: 34nC Kind of channel: enhanced Gate-source voltage: ±25V Pulsed drain current: -128A Drain-source voltage: -30V Drain current: -9A On-state resistance: 25mΩ Type of transistor: P-MOSFET |
Produkt ist nicht verfügbar |