DMP3026SFDE-7 Diodes Incorporated
Hersteller: Diodes IncorporatedDescription: MOSFET P-CH 30V 10.4A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerUDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10.4A (Ta)
Rds On (Max) @ Id, Vgs: 19mOhm @ 4.5A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type E)
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 19.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1204 pF @ 15 V
auf Bestellung 60000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.27 EUR |
| 6000+ | 0.23 EUR |
| 15000+ | 0.22 EUR |
| 21000+ | 0.21 EUR |
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Technische Details DMP3026SFDE-7 Diodes Incorporated
Description: MOSFET P-CH 30V 10.4A 6UDFN, Packaging: Tape & Reel (TR), Package / Case: 6-PowerUDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 10.4A (Ta), Rds On (Max) @ Id, Vgs: 19mOhm @ 4.5A, 10V, Power Dissipation (Max): 2W (Ta), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: U-DFN2020-6 (Type E), Drive Voltage (Max Rds On, Min Rds On): 4V, 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 19.6 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1204 pF @ 15 V.
Weitere Produktangebote DMP3026SFDE-7 nach Preis ab 0.25 EUR bis 1.16 EUR
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DMP3026SFDE-7 | Hersteller : Diodes Incorporated |
MOSFETs MOSFET BVDSS: 25V-30V |
auf Bestellung 2320 Stücke: Lieferzeit 10-14 Tag (e) |
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DMP3026SFDE-7 | Hersteller : Diodes Incorporated |
Description: MOSFET P-CH 30V 10.4A 6UDFN Packaging: Cut Tape (CT) Package / Case: 6-PowerUDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 10.4A (Ta) Rds On (Max) @ Id, Vgs: 19mOhm @ 4.5A, 10V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: U-DFN2020-6 (Type E) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 19.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1204 pF @ 15 V |
auf Bestellung 62258 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMP3026SFDE-7 | Hersteller : DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -8.4A; Idm: -50A; 1.3W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -8.4A Pulsed drain current: -50A Power dissipation: 1.3W Case: U-DFN2020-6 Gate-source voltage: ±25V On-state resistance: 54mΩ Mounting: SMD Gate charge: 19.6nC Kind of package: 7 inch reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| DMP3026SFDE-7 | Hersteller : DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -8.4A; Idm: -50A; 1.3W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -8.4A Pulsed drain current: -50A Power dissipation: 1.3W Case: U-DFN2020-6 Gate-source voltage: ±25V On-state resistance: 54mΩ Mounting: SMD Gate charge: 19.6nC Kind of package: 7 inch reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |