Technische Details DMP3028LFDEQ-7 Diodes Inc
Description: MOSFET BVDSS: 25V~30V U-DFN2020-, Packaging: Tape & Reel (TR), Package / Case: 6-PowerUDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta), Rds On (Max) @ Id, Vgs: 25mOhm @ 7A, 10V, Power Dissipation (Max): 660mW (Ta), Vgs(th) (Max) @ Id: 2.4V @ 250µA, Supplier Device Package: U-DFN2020-6 (Type E), Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1860 pF @ 15 V, Qualification: AEC-Q101.
Weitere Produktangebote DMP3028LFDEQ-7
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DMP3028LFDEQ-7 | Hersteller : Diodes Incorporated |
 Description: MOSFET BVDSS: 25V~30V U-DFN2020-Packaging: Tape & Reel (TR) Package / Case: 6-PowerUDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta) Rds On (Max) @ Id, Vgs: 25mOhm @ 7A, 10V Power Dissipation (Max): 660mW (Ta) Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: U-DFN2020-6 (Type E) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1860 pF @ 15 V Qualification: AEC-Q101 |
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