DMP3028LK3Q-13 Diodes Incorporated
Hersteller: Diodes IncorporatedDescription: MOSFET P-CHANNEL 30V 27A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 7A, 10V
Power Dissipation (Max): 2.8W (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: TO-252, (D-Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1241 pF @ 15 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2500+ | 0.42 EUR |
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Technische Details DMP3028LK3Q-13 Diodes Incorporated
Description: MOSFET P-CHANNEL 30V 27A TO252, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 27A (Tc), Rds On (Max) @ Id, Vgs: 25mOhm @ 7A, 10V, Power Dissipation (Max): 2.8W (Ta), Vgs(th) (Max) @ Id: 2.4V @ 250µA, Supplier Device Package: TO-252, (D-Pak), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1241 pF @ 15 V.
Weitere Produktangebote DMP3028LK3Q-13 nach Preis ab 0.47 EUR bis 1.09 EUR
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DMP3028LK3Q-13 | Hersteller : Diodes Incorporated |
Description: MOSFET P-CHANNEL 30V 27A TO252 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 27A (Tc) Rds On (Max) @ Id, Vgs: 25mOhm @ 7A, 10V Power Dissipation (Max): 2.8W (Ta) Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: TO-252, (D-Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1241 pF @ 15 V |
auf Bestellung 4900 Stücke: Lieferzeit 10-14 Tag (e) |
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Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -8.6A; Idm: -40A; 1.8W; TO252 Mounting: SMD Kind of package: reel; tape Power dissipation: 1.8W Polarisation: unipolar Gate charge: 22nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -40A Case: TO252 Drain-source voltage: -30V Drain current: -8.6A On-state resistance: 38mΩ Type of transistor: P-MOSFET |
Produkt ist nicht verfügbar |