DMP3030SN-7 Diodes Incorporated
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 30V 700MA SC59-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 700mA (Ta)
Rds On (Max) @ Id, Vgs: 250mOhm @ 400mA, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: SC-59-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 160 pF @ 10 V
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.2 EUR |
| 6000+ | 0.18 EUR |
| 15000+ | 0.17 EUR |
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Technische Details DMP3030SN-7 Diodes Incorporated
Description: MOSFET P-CH 30V 700MA SC59-3, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -65°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 700mA (Ta), Rds On (Max) @ Id, Vgs: 250mOhm @ 400mA, 10V, Power Dissipation (Max): 500mW (Ta), Vgs(th) (Max) @ Id: 3V @ 1mA, Supplier Device Package: SC-59-3, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Input Capacitance (Ciss) (Max) @ Vds: 160 pF @ 10 V.
Weitere Produktangebote DMP3030SN-7 nach Preis ab 0.15 EUR bis 0.99 EUR
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DMP3030SN-7 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -700mA; Idm: -2.8A; 500mW Case: SC59 Mounting: SMD Kind of package: 7 inch reel; tape Pulsed drain current: -2.8A Power dissipation: 0.5W Polarisation: unipolar Drain current: -700mA Kind of channel: enhancement Drain-source voltage: -30V Type of transistor: P-MOSFET Gate-source voltage: ±20V On-state resistance: 0.45Ω |
auf Bestellung 1685 Stücke: Lieferzeit 14-21 Tag (e) |
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DMP3030SN-7 | Diodes Incorporated |
MOSFETs 30V 700mA |
auf Bestellung 583 Stücke: Lieferzeit 10-14 Tag (e) |
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DMP3030SN-7 | Diodes Incorporated |
Description: MOSFET P-CH 30V 700MA SC59-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 700mA (Ta) Rds On (Max) @ Id, Vgs: 250mOhm @ 400mA, 10V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 3V @ 1mA Supplier Device Package: SC-59-3 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Input Capacitance (Ciss) (Max) @ Vds: 160 pF @ 10 V |
auf Bestellung 87779 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMP3030SN-7 |
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Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -700mA; Idm: -2.8A; 500mW
Case: SC59
Mounting: SMD
Kind of package: 7 inch reel; tape
Pulsed drain current: -2.8A
Power dissipation: 0.5W
Polarisation: unipolar
Drain current: -700mA
Kind of channel: enhancement
Drain-source voltage: -30V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
On-state resistance: 0.45Ω
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -700mA; Idm: -2.8A; 500mW
Case: SC59
Mounting: SMD
Kind of package: 7 inch reel; tape
Pulsed drain current: -2.8A
Power dissipation: 0.5W
Polarisation: unipolar
Drain current: -700mA
Kind of channel: enhancement
Drain-source voltage: -30V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
On-state resistance: 0.45Ω
auf Bestellung 1685 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 148+ | 0.58 EUR |
| 210+ | 0.4 EUR |
| 334+ | 0.25 EUR |
| 500+ | 0.18 EUR |
| 1000+ | 0.15 EUR |
| DMP3030SN-7 |
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Hersteller: Diodes Incorporated
MOSFETs 30V 700mA
MOSFETs 30V 700mA
auf Bestellung 583 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 0.92 EUR |
| 10+ | 0.57 EUR |
| 100+ | 0.36 EUR |
| 500+ | 0.27 EUR |
| DMP3030SN-7 |
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Hersteller: Diodes Incorporated
Description: MOSFET P-CH 30V 700MA SC59-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 700mA (Ta)
Rds On (Max) @ Id, Vgs: 250mOhm @ 400mA, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: SC-59-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 160 pF @ 10 V
Description: MOSFET P-CH 30V 700MA SC59-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 700mA (Ta)
Rds On (Max) @ Id, Vgs: 250mOhm @ 400mA, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: SC-59-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 160 pF @ 10 V
auf Bestellung 87779 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 22+ | 0.99 EUR |
| 35+ | 0.61 EUR |
| 100+ | 0.38 EUR |
| 500+ | 0.29 EUR |
| 1000+ | 0.26 EUR |