DMP3035SFG-7 DIODES INCORPORATED
Hersteller: DIODES INCORPORATEDCategory: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -10A; Idm: -70A; 2.3W
Kind of package: 7 inch reel; tape
Case: PowerDI3333-8
Kind of channel: enhancement
Mounting: SMD
Polarisation: unipolar
Pulsed drain current: -70A
Drain-source voltage: -30V
Drain current: -10A
Gate charge: 35.5nC
Type of transistor: P-MOSFET
On-state resistance: 29mΩ
Power dissipation: 2.3W
Gate-source voltage: ±25V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2000 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 85+ | 0.84 EUR |
| 128+ | 0.56 EUR |
| 217+ | 0.33 EUR |
| 500+ | 0.24 EUR |
| 1000+ | 0.21 EUR |
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Produktbewertung abgeben
Technische Details DMP3035SFG-7 DIODES INCORPORATED
Description: MOSFET P-CH 30V 8.5A PWRDI3333-8, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta), Rds On (Max) @ Id, Vgs: 20mOhm @ 8A, 10V, Power Dissipation (Max): 950mW (Ta), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: PowerDI3333-8, Drive Voltage (Max Rds On, Min Rds On): 5V, 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1633 pF @ 15 V.
Weitere Produktangebote DMP3035SFG-7 nach Preis ab 0.21 EUR bis 1.25 EUR
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DMP3035SFG-7 | Hersteller : DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -10A; Idm: -70A; 2.3W Kind of package: 7 inch reel; tape Case: PowerDI3333-8 Kind of channel: enhancement Mounting: SMD Polarisation: unipolar Pulsed drain current: -70A Drain-source voltage: -30V Drain current: -10A Gate charge: 35.5nC Type of transistor: P-MOSFET On-state resistance: 29mΩ Power dissipation: 2.3W Gate-source voltage: ±25V |
auf Bestellung 2000 Stücke: Lieferzeit 14-21 Tag (e) |
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DMP3035SFG-7 | Hersteller : Diodes Incorporated |
MOSFETs MOSFET BVDSS: 25V-30 PowerDI3333-8 T&R 2 |
auf Bestellung 4630 Stücke: Lieferzeit 10-14 Tag (e) |
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DMP3035SFG-7 | Hersteller : Diodes Incorporated |
Description: MOSFET P-CH 30V 8.5A PWRDI3333-8 Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta) Rds On (Max) @ Id, Vgs: 20mOhm @ 8A, 10V Power Dissipation (Max): 950mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerDI3333-8 Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1633 pF @ 15 V |
auf Bestellung 1880 Stücke: Lieferzeit 10-14 Tag (e) |
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DMP3035SFG-7 | Hersteller : Diodes Inc |
Trans MOSFET P-CH 30V 8.5A 8-Pin PowerDI 3333-8 T/R |
Produkt ist nicht verfügbar |
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DMP3035SFG-7 | Hersteller : Diodes Incorporated |
Description: MOSFET P-CH 30V 8.5A PWRDI3333-8 Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta) Rds On (Max) @ Id, Vgs: 20mOhm @ 8A, 10V Power Dissipation (Max): 950mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerDI3333-8 Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1633 pF @ 15 V |
Produkt ist nicht verfügbar |