DMP3036SFG-13 Diodes Incorporated
Hersteller: Diodes IncorporatedDescription: MOSFET P-CH 30V 8.7A PWRDI3333-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8.7A (Ta)
Rds On (Max) @ Id, Vgs: 20mOhm @ 8A, 10V
Power Dissipation (Max): 950mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI3333-8
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1931 pF @ 15 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.38 EUR |
| 6000+ | 0.36 EUR |
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Technische Details DMP3036SFG-13 Diodes Incorporated
Description: MOSFET P-CH 30V 8.7A PWRDI3333-8, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 8.7A (Ta), Rds On (Max) @ Id, Vgs: 20mOhm @ 8A, 10V, Power Dissipation (Max): 950mW (Ta), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: PowerDI3333-8, Drive Voltage (Max Rds On, Min Rds On): 5V, 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1931 pF @ 15 V.
Weitere Produktangebote DMP3036SFG-13 nach Preis ab 0.35 EUR bis 1 EUR
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DMP3036SFG-13 | Hersteller : Diodes Incorporated |
MOSFET P-Ch Enh Mode FET Vdss -30V 25Vgss |
auf Bestellung 2030 Stücke: Lieferzeit 10-14 Tag (e) |
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DMP3036SFG-13 | Hersteller : Diodes Incorporated |
Description: MOSFET P-CH 30V 8.7A PWRDI3333-8 Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 8.7A (Ta) Rds On (Max) @ Id, Vgs: 20mOhm @ 8A, 10V Power Dissipation (Max): 950mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerDI3333-8 Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1931 pF @ 15 V |
auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMP3036SFG-13 | Hersteller : DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -25A; Idm: -80A; 2.3W Mounting: SMD Drain-source voltage: -30V Drain current: -25A On-state resistance: 29mΩ Type of transistor: P-MOSFET Power dissipation: 2.3W Polarisation: unipolar Kind of package: reel; tape Gate charge: 16.5nC Kind of channel: enhanced Gate-source voltage: ±25V Pulsed drain current: -80A Case: PowerDI3333-8 Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| DMP3036SFG-13 | Hersteller : DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -25A; Idm: -80A; 2.3W Mounting: SMD Drain-source voltage: -30V Drain current: -25A On-state resistance: 29mΩ Type of transistor: P-MOSFET Power dissipation: 2.3W Polarisation: unipolar Kind of package: reel; tape Gate charge: 16.5nC Kind of channel: enhanced Gate-source voltage: ±25V Pulsed drain current: -80A Case: PowerDI3333-8 |
Produkt ist nicht verfügbar |