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Technische Details DMP3036SFV-7 Diodes Zetex
Description: MOSFET P-CH 30V 30A POWERDI3333, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 30A (Ta), Rds On (Max) @ Id, Vgs: 20mOhm @ 8A, 10V, Power Dissipation (Max): 2.3W (Ta), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: PowerDI3333-8 (Type UX), Drive Voltage (Max Rds On, Min Rds On): 5V, 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1931 pF @ 15 V.
Weitere Produktangebote DMP3036SFV-7 nach Preis ab 0.3 EUR bis 1.65 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||
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DMP3036SFV-7 | Diodes Incorporated |
Description: MOSFET P-CH 30V 30A POWERDI3333Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Ta) Rds On (Max) @ Id, Vgs: 20mOhm @ 8A, 10V Power Dissipation (Max): 2.3W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerDI3333-8 (Type UX) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1931 pF @ 15 V |
auf Bestellung 20000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMP3036SFV-7 | DIODES INCORPORATED |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -30V; -7A; Idm: -80A; 2.3W Mounting: SMD Case: PowerDI3333-8 Type of transistor: P-MOSFET Pulsed drain current: -80A Drain-source voltage: -30V Drain current: -7A Gate charge: 16.5nC On-state resistance: 29mΩ Power dissipation: 2.3W Gate-source voltage: ±25V Kind of package: 7 inch reel; tape Polarisation: unipolar Kind of channel: enhancement |
auf Bestellung 1907 Stücke: Lieferzeit 14-21 Tag (e) |
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DMP3036SFV-7 | Diodes Incorporated |
MOSFETs MOSFET BVDSS: 25V-30V |
auf Bestellung 1907 Stücke: Lieferzeit 10-14 Tag (e) |
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DMP3036SFV-7 | Diodes Incorporated |
Description: MOSFET P-CH 30V 30A POWERDI3333Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Ta) Rds On (Max) @ Id, Vgs: 20mOhm @ 8A, 10V Power Dissipation (Max): 2.3W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerDI3333-8 (Type UX) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1931 pF @ 15 V |
auf Bestellung 20865 Stücke: Lieferzeit 10-14 Tag (e) |
|
| DMP3036SFV-7 |
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Hersteller: Diodes Incorporated
Description: MOSFET P-CH 30V 30A POWERDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
Rds On (Max) @ Id, Vgs: 20mOhm @ 8A, 10V
Power Dissipation (Max): 2.3W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI3333-8 (Type UX)
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1931 pF @ 15 V
Description: MOSFET P-CH 30V 30A POWERDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
Rds On (Max) @ Id, Vgs: 20mOhm @ 8A, 10V
Power Dissipation (Max): 2.3W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI3333-8 (Type UX)
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1931 pF @ 15 V
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2000+ | 0.42 EUR |
| 4000+ | 0.38 EUR |
| 6000+ | 0.37 EUR |
| 10000+ | 0.35 EUR |
| 14000+ | 0.33 EUR |
| 20000+ | 0.32 EUR |
| DMP3036SFV-7 |
![]() |
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -7A; Idm: -80A; 2.3W
Mounting: SMD
Case: PowerDI3333-8
Type of transistor: P-MOSFET
Pulsed drain current: -80A
Drain-source voltage: -30V
Drain current: -7A
Gate charge: 16.5nC
On-state resistance: 29mΩ
Power dissipation: 2.3W
Gate-source voltage: ±25V
Kind of package: 7 inch reel; tape
Polarisation: unipolar
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -7A; Idm: -80A; 2.3W
Mounting: SMD
Case: PowerDI3333-8
Type of transistor: P-MOSFET
Pulsed drain current: -80A
Drain-source voltage: -30V
Drain current: -7A
Gate charge: 16.5nC
On-state resistance: 29mΩ
Power dissipation: 2.3W
Gate-source voltage: ±25V
Kind of package: 7 inch reel; tape
Polarisation: unipolar
Kind of channel: enhancement
auf Bestellung 1907 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 82+ | 1.04 EUR |
| 130+ | 0.65 EUR |
| 207+ | 0.42 EUR |
| 500+ | 0.31 EUR |
| 1000+ | 0.3 EUR |
| DMP3036SFV-7 |
![]() |
Hersteller: Diodes Incorporated
MOSFETs MOSFET BVDSS: 25V-30V
MOSFETs MOSFET BVDSS: 25V-30V
auf Bestellung 1907 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 1.09 EUR |
| 10+ | 0.94 EUR |
| 100+ | 0.65 EUR |
| 500+ | 0.51 EUR |
| 1000+ | 0.42 EUR |
| 2000+ | 0.37 EUR |
| DMP3036SFV-7 |
![]() |
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 30V 30A POWERDI3333
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
Rds On (Max) @ Id, Vgs: 20mOhm @ 8A, 10V
Power Dissipation (Max): 2.3W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI3333-8 (Type UX)
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1931 pF @ 15 V
Description: MOSFET P-CH 30V 30A POWERDI3333
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
Rds On (Max) @ Id, Vgs: 20mOhm @ 8A, 10V
Power Dissipation (Max): 2.3W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI3333-8 (Type UX)
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1931 pF @ 15 V
auf Bestellung 20865 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 13+ | 1.65 EUR |
| 21+ | 1.02 EUR |
| 100+ | 0.67 EUR |
| 500+ | 0.51 EUR |
| 1000+ | 0.46 EUR |





