DMP3037LSS-13 Diodes Incorporated
Hersteller: Diodes IncorporatedDescription: MOSFET P-CH 30V 5.8A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta)
Rds On (Max) @ Id, Vgs: 32mOhm @ 7A, 10V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 19.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 931 pF @ 15 V
auf Bestellung 17500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2500+ | 0.23 EUR |
| 5000+ | 0.22 EUR |
| 12500+ | 0.2 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details DMP3037LSS-13 Diodes Incorporated
Description: MOSFET P-CH 30V 5.8A 8SO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta), Rds On (Max) @ Id, Vgs: 32mOhm @ 7A, 10V, Power Dissipation (Max): 1.2W (Ta), Vgs(th) (Max) @ Id: 2.4V @ 250µA, Supplier Device Package: 8-SO, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 19.3 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 931 pF @ 15 V.
Weitere Produktangebote DMP3037LSS-13 nach Preis ab 0.17 EUR bis 0.69 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
DMP3037LSS-13 | Hersteller : Diodes Zetex |
Trans MOSFET P-CH 30V 5.8A 8-Pin SO T/R |
auf Bestellung 1104 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||
|
|
DMP3037LSS-13 | Hersteller : Diodes Zetex |
Trans MOSFET P-CH 30V 5.8A 8-Pin SO T/R |
auf Bestellung 1104 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||
 |
DMP3037LSS-13 | Hersteller : Diodes Incorporated |
MOSFET 30V P-Ch Enh Mode 20Vgss 931pF 19.3nC |
auf Bestellung 21442 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
|
|
DMP3037LSS-13 | Hersteller : Diodes Incorporated |
Description: MOSFET P-CH 30V 5.8A 8SO Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta) Rds On (Max) @ Id, Vgs: 32mOhm @ 7A, 10V Power Dissipation (Max): 1.2W (Ta) Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: 8-SO Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 19.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 931 pF @ 15 V |
auf Bestellung 19256 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
 |
DMP3037LSS-13 | Hersteller : DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -4.6A; Idm: -40A; 1W; SO8 Kind of package: reel; tape Drain-source voltage: -30V Drain current: -4.6A On-state resistance: 50mΩ Type of transistor: P-MOSFET Power dissipation: 1W Polarisation: unipolar Gate charge: 19.3nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -40A Mounting: SMD Case: SO8 Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
|||||||||||||||||
|
|
DMP3037LSS-13 | Hersteller : Diodes Zetex |
Trans MOSFET P-CH 30V 5.8A 8-Pin SO T/R |
Produkt ist nicht verfügbar |
|||||||||||||||||
|
|
DMP3037LSS-13 | Hersteller : DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -4.6A; Idm: -40A; 1W; SO8 Kind of package: reel; tape Drain-source voltage: -30V Drain current: -4.6A On-state resistance: 50mΩ Type of transistor: P-MOSFET Power dissipation: 1W Polarisation: unipolar Gate charge: 19.3nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -40A Mounting: SMD Case: SO8 |
Produkt ist nicht verfügbar |