DMP3056LDMQ-7 Diodes Zetex
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.33 EUR |
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Lieferzeit:
14-21 Tag (e)
Mindestmenge:
3000 Stücke
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Technische Details DMP3056LDMQ-7 Diodes Zetex
Description: MOSFET BVDSS: 25V~30V SOT26 T&R, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta), Rds On (Max) @ Id, Vgs: 45mOhm @ 5A, 10V, Power Dissipation (Max): 1.25W (Ta), Vgs(th) (Max) @ Id: 2.1V @ 250µA, Supplier Device Package: SOT-26, Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 21.1 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 948 pF @ 25 V, Qualification: AEC-Q101.
Weitere Produktangebote DMP3056LDMQ-7 nach Preis ab 0.74 EUR bis 1.8 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||
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DMP3056LDMQ-7 | Diodes Incorporated |
 Description: MOSFET BVDSS: 25V~30V SOT26 T&RPackaging: Cut Tape (CT) Package / Case: SOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta) Rds On (Max) @ Id, Vgs: 45mOhm @ 5A, 10V Power Dissipation (Max): 1.25W (Ta) Vgs(th) (Max) @ Id: 2.1V @ 250µA Supplier Device Package: SOT-26 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 21.1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 948 pF @ 25 V Qualification: AEC-Q101 |
auf Bestellung 2904 Stücke: Lieferzeit 10-14 Tag (e) |
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DMP3056LDMQ-7 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -3.3A; 1.25W; SOT26 Mounting: SMD Power dissipation: 1.25W Polarisation: unipolar Drain current: -3.3A Kind of channel: enhancement Drain-source voltage: -30V Application: automotive industry Type of transistor: P-MOSFET Gate-source voltage: ±20V Kind of package: 7 inch reel; tape Case: SOT26 On-state resistance: 65mΩ |
auf Bestellung 1996 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| DMP3056LDMQ-7 |
|
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 25V~30V SOT26 T&R
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta)
Rds On (Max) @ Id, Vgs: 45mOhm @ 5A, 10V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: SOT-26
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 21.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 948 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET BVDSS: 25V~30V SOT26 T&R
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta)
Rds On (Max) @ Id, Vgs: 45mOhm @ 5A, 10V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: SOT-26
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 21.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 948 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 2904 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 12+ | 1.8 EUR |
| 19+ | 1.13 EUR |
| 25+ | 0.94 EUR |
| 50+ | 0.83 EUR |
| 100+ | 0.74 EUR |
| DMP3056LDMQ-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.3A; 1.25W; SOT26
Mounting: SMD
Power dissipation: 1.25W
Polarisation: unipolar
Drain current: -3.3A
Kind of channel: enhancement
Drain-source voltage: -30V
Application: automotive industry
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Kind of package: 7 inch reel; tape
Case: SOT26
On-state resistance: 65mΩ
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.3A; 1.25W; SOT26
Mounting: SMD
Power dissipation: 1.25W
Polarisation: unipolar
Drain current: -3.3A
Kind of channel: enhancement
Drain-source voltage: -30V
Application: automotive industry
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Kind of package: 7 inch reel; tape
Case: SOT26
On-state resistance: 65mΩ
auf Bestellung 1996 Stücke:
Lieferzeit 14-21 Tag (e)