DMP3056LDMQ-7 Diodes Incorporated
Hersteller: Diodes IncorporatedDescription: MOSFET BVDSS: 25V~30V SOT26 T&R
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta)
Rds On (Max) @ Id, Vgs: 45mOhm @ 5A, 10V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: SOT-26
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 21.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 948 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 30000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.25 EUR |
| 6000+ | 0.23 EUR |
| 9000+ | 0.22 EUR |
| 15000+ | 0.21 EUR |
| 21000+ | 0.2 EUR |
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Technische Details DMP3056LDMQ-7 Diodes Incorporated
Description: MOSFET BVDSS: 25V~30V SOT26 T&R, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta), Rds On (Max) @ Id, Vgs: 45mOhm @ 5A, 10V, Power Dissipation (Max): 1.25W (Ta), Vgs(th) (Max) @ Id: 2.1V @ 250µA, Supplier Device Package: SOT-26, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 21.1 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 948 pF @ 25 V, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote DMP3056LDMQ-7 nach Preis ab 0.19 EUR bis 1.09 EUR
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DMP3056LDMQ-7 | Hersteller : DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -3.3A; 1.25W; SOT26 Mounting: SMD Case: SOT26 Kind of package: 7 inch reel; tape Type of transistor: P-MOSFET Drain-source voltage: -30V Drain current: -3.3A On-state resistance: 65mΩ Power dissipation: 1.25W Gate-source voltage: ±20V Application: automotive industry Polarisation: unipolar Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2996 Stücke: Lieferzeit 7-14 Tag (e) |
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DMP3056LDMQ-7 | Hersteller : DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -3.3A; 1.25W; SOT26 Mounting: SMD Case: SOT26 Kind of package: 7 inch reel; tape Type of transistor: P-MOSFET Drain-source voltage: -30V Drain current: -3.3A On-state resistance: 65mΩ Power dissipation: 1.25W Gate-source voltage: ±20V Application: automotive industry Polarisation: unipolar Kind of channel: enhancement |
auf Bestellung 2996 Stücke: Lieferzeit 14-21 Tag (e) |
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DMP3056LDMQ-7 | Hersteller : Diodes Incorporated |
MOSFETs MOSFET BVDSS: 25V-30V SOT26 T&R 3K |
auf Bestellung 2671 Stücke: Lieferzeit 10-14 Tag (e) |
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DMP3056LDMQ-7 | Hersteller : Diodes Incorporated |
Description: MOSFET BVDSS: 25V~30V SOT26 T&R Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta) Rds On (Max) @ Id, Vgs: 45mOhm @ 5A, 10V Power Dissipation (Max): 1.25W (Ta) Vgs(th) (Max) @ Id: 2.1V @ 250µA Supplier Device Package: SOT-26 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 21.1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 948 pF @ 25 V Qualification: AEC-Q101 |
auf Bestellung 32905 Stücke: Lieferzeit 10-14 Tag (e) |
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DMP3056LDMQ-7 | Hersteller : Diodes Zetex |
Trans MOSFET P-CH 30V 4.3A 6-Pin SOT-26 T/R Automotive AEC-Q101 |
Produkt ist nicht verfügbar |
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DMP3056LDMQ-7 | Hersteller : Diodes Inc |
Trans MOSFET P-CH 30V 4.3A Automotive 6-Pin SOT-26 T/R |
Produkt ist nicht verfügbar |