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DMP3056LDMQ-7

DMP3056LDMQ-7 Diodes Incorporated

DMP3056LDM.pdf
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 25V~30V SOT26 T&R
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta)
Rds On (Max) @ Id, Vgs: 45mOhm @ 5A, 10V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: SOT-26
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 21.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 948 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 42000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
3000+0.28 EUR
6000+0.25 EUR
9000+0.24 EUR
15000+0.23 EUR
21000+0.22 EUR
30000+0.21 EUR
Mindestbestellmenge: 3000 Stücke
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Technische Details DMP3056LDMQ-7 Diodes Incorporated

Description: MOSFET BVDSS: 25V~30V SOT26 T&R, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta), Rds On (Max) @ Id, Vgs: 45mOhm @ 5A, 10V, Power Dissipation (Max): 1.25W (Ta), Vgs(th) (Max) @ Id: 2.1V @ 250µA, Supplier Device Package: SOT-26, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 21.1 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 948 pF @ 25 V, Grade: Automotive, Qualification: AEC-Q101.

Weitere Produktangebote DMP3056LDMQ-7 nach Preis ab 0.2 EUR bis 1.42 EUR

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DMP3056LDMQ-7 DMP3056LDMQ-7 DIODES INCORPORATED DMP3056LDMQ.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.3A; 1.25W; SOT26
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.3A
Power dissipation: 1.25W
Case: SOT26
Gate-source voltage: ±20V
On-state resistance: 65mΩ
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
auf Bestellung 2996 Stücke:
Lieferzeit 14-21 Tag (e)
97+0.74 EUR
150+0.48 EUR
236+0.3 EUR
500+0.23 EUR
1000+0.2 EUR
Mindestbestellmenge: 97 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DMP3056LDMQ-7 DMP3056LDMQ-7 Diodes Incorporated DMP3056LDM.pdf Description: MOSFET BVDSS: 25V~30V SOT26 T&R
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta)
Rds On (Max) @ Id, Vgs: 45mOhm @ 5A, 10V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: SOT-26
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 21.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 948 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 44904 Stücke:
Lieferzeit 10-14 Tag (e)
15+1.18 EUR
24+0.73 EUR
100+0.47 EUR
500+0.36 EUR
1000+0.32 EUR
Mindestbestellmenge: 15 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DMP3056LDMQ-7 DMP3056LDMQ-7 Diodes Incorporated DMP3056LDM.pdf MOSFETs MOSFET BVDSS: 25V-30V SOT26 T&R 3K
auf Bestellung 2671 Stücke:
Lieferzeit 10-14 Tag (e)
2+1.42 EUR
10+0.89 EUR
100+0.58 EUR
500+0.44 EUR
1000+0.4 EUR
3000+0.34 EUR
6000+0.32 EUR
Mindestbestellmenge: 2 Stücke
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DMP3056LDMQ-7 DMP3056LDMQ.pdf
DMP3056LDMQ-7
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.3A; 1.25W; SOT26
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.3A
Power dissipation: 1.25W
Case: SOT26
Gate-source voltage: ±20V
On-state resistance: 65mΩ
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
auf Bestellung 2996 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
97+0.74 EUR
150+0.48 EUR
236+0.3 EUR
500+0.23 EUR
1000+0.2 EUR
Mindestbestellmenge: 97 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DMP3056LDMQ-7 DMP3056LDM.pdf
DMP3056LDMQ-7
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 25V~30V SOT26 T&R
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta)
Rds On (Max) @ Id, Vgs: 45mOhm @ 5A, 10V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: SOT-26
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 21.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 948 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 44904 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
15+1.18 EUR
24+0.73 EUR
100+0.47 EUR
500+0.36 EUR
1000+0.32 EUR
Mindestbestellmenge: 15 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DMP3056LDMQ-7 DMP3056LDM.pdf
DMP3056LDMQ-7
Hersteller: Diodes Incorporated
MOSFETs MOSFET BVDSS: 25V-30V SOT26 T&R 3K
auf Bestellung 2671 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
2+1.42 EUR
10+0.89 EUR
100+0.58 EUR
500+0.44 EUR
1000+0.4 EUR
3000+0.34 EUR
6000+0.32 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH