DMP3065LVT-13 Diodes Incorporated

Description: MOSFET P-CH 30V 5.1A TSOT-26, Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: TSOT-26, Vgs(th) (Max) @ Id: 2.1V @ 250µA, Power Dissipation (Max): 1.2W (Ta), Rds On (Max) @ Id, Vgs: 42mOhm @ 4.9A, 10V, Current - Continuous Drain (Id) @ 25°C: 5.1A (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: SOT-23-6 Thin, TSOT-23-6, Packaging: Tape & Reel (TR).