auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl | Preis ohne MwSt |
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3000+ | 0.27 EUR |
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Produktbewertung abgeben
Technische Details DMP3098LDM-7 Diodes Zetex
Description: MOSFET P-CH 30V 4A SOT-26, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 4A (Ta), Rds On (Max) @ Id, Vgs: 65mOhm @ 4A, 10V, Power Dissipation (Max): 1.25W (Ta), Vgs(th) (Max) @ Id: 2.1V @ 250µA, Supplier Device Package: SOT-26, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 7.8 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 336 pF @ 25 V.
Weitere Produktangebote DMP3098LDM-7 nach Preis ab 0.27 EUR bis 1.52 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
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DMP3098LDM-7 | Hersteller : Diodes Zetex | Trans MOSFET P-CH 30V 4A 6-Pin SOT-26 T/R |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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DMP3098LDM-7 | Hersteller : Diodes Incorporated |
Description: MOSFET P-CH 30V 4A SOT-26 Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 65mOhm @ 4A, 10V Power Dissipation (Max): 1.25W (Ta) Vgs(th) (Max) @ Id: 2.1V @ 250µA Supplier Device Package: SOT-26 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 7.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 336 pF @ 25 V |
auf Bestellung 2530 Stücke: Lieferzeit 21-28 Tag (e) |
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DMP3098LDM-7 | Hersteller : Diodes Incorporated | MOSFET PMOS-SINGLE |
auf Bestellung 5903 Stücke: Lieferzeit 14-28 Tag (e) |
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DMP3098LDM-7 | Hersteller : Diodes Inc | Trans MOSFET P-CH 30V 4A 6-Pin SOT-26 T/R |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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DMP3098LDM-7 | Hersteller : DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -3A; Idm: -14A; 1.25W; SOT26 Kind of package: reel; tape Drain-source voltage: -30V Drain current: -3A On-state resistance: 0.115Ω Type of transistor: P-MOSFET Power dissipation: 1.25W Polarisation: unipolar Gate charge: 7.8nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -14A Mounting: SMD Case: SOT26 Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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DMP3098LDM-7 | Hersteller : Diodes Incorporated |
Description: MOSFET P-CH 30V 4A SOT-26 Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 65mOhm @ 4A, 10V Power Dissipation (Max): 1.25W (Ta) Vgs(th) (Max) @ Id: 2.1V @ 250µA Supplier Device Package: SOT-26 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 7.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 336 pF @ 25 V |
Produkt ist nicht verfügbar |
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DMP3098LDM-7 | Hersteller : DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -3A; Idm: -14A; 1.25W; SOT26 Kind of package: reel; tape Drain-source voltage: -30V Drain current: -3A On-state resistance: 0.115Ω Type of transistor: P-MOSFET Power dissipation: 1.25W Polarisation: unipolar Gate charge: 7.8nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -14A Mounting: SMD Case: SOT26 |
Produkt ist nicht verfügbar |