DMP3099L-7 Diodes
auf Bestellung 90 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 79+ | 0.065 EUR |
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Technische Details DMP3099L-7 Diodes
Description: MOSFET P-CH 30V 3.8A SOT23, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta), Rds On (Max) @ Id, Vgs: 65mOhm @ 3.8A, 10V, Power Dissipation (Max): 1.08W (Ta), Vgs(th) (Max) @ Id: 2.1V @ 250µA, Supplier Device Package: SOT-23-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 5.2 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 563 pF @ 25 V.
Weitere Produktangebote DMP3099L-7 nach Preis ab 0.061 EUR bis 0.51 EUR
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DMP3099L-7 | Hersteller : Diodes Incorporated |
 Description: MOSFET P-CH 30V 3.8A SOT23Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta) Rds On (Max) @ Id, Vgs: 65mOhm @ 3.8A, 10V Power Dissipation (Max): 1.08W (Ta) Vgs(th) (Max) @ Id: 2.1V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 5.2 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 563 pF @ 25 V |
auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMP3099L-7 | Hersteller : DIODES/ZETEX |
P-MOSFET 30V 3.8A 65mΩ 1.08W DMP3099L-7 Diodes TDMP3099l Anzahl je Verpackung: 100 Stücke |
auf Bestellung 18000 Stücke: Lieferzeit 7-14 Tag (e) |
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DMP3099L-7 | Hersteller : DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -2.9A; 1.08W; SOT23 Kind of channel: enhancement Mounting: SMD Case: SOT23 Type of transistor: P-MOSFET Drain-source voltage: -30V Drain current: -2.9A On-state resistance: 99mΩ Power dissipation: 1.08W Gate-source voltage: ±20V Kind of package: 7 inch reel; tape Polarisation: unipolar |
auf Bestellung 6813 Stücke: Lieferzeit 14-21 Tag (e) |
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DMP3099L-7 | Hersteller : Diodes Incorporated |
MOSFETs P-Ch ENH FET -30V 65mOhm -20V -3.8A |
auf Bestellung 827627 Stücke: Lieferzeit 10-14 Tag (e) |
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DMP3099L-7 | Hersteller : Diodes Incorporated |
Description: MOSFET P-CH 30V 3.8A SOT23 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta) Rds On (Max) @ Id, Vgs: 65mOhm @ 3.8A, 10V Power Dissipation (Max): 1.08W (Ta) Vgs(th) (Max) @ Id: 2.1V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 5.2 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 563 pF @ 25 V |
auf Bestellung 6968 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMP3099L-7 | Hersteller : Diodes INC. |
P-канальний ПТ, Udss, В = 30, Id = 3,8 А, Ciss, пФ @ Uds, В = 563 @ 25, Qg, нКл = 5,2 @ 4,5 В, Rds = 65 мОм @ 3,8 A, 10 В, Ugs(th) = 2,1 В @ 250 мкА, Р, Вт = 1,08, Тексп, °C = -55...+150, Тип монт. = smd,... Група товару: Транзистори Корпус: SOT-23-3 Од. Anzahl je Verpackung: 3000 Stücke |
verfügbar 30 Stücke: |