DMP3165L-13 Diodes Incorporated
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 30V 3.3A SOT23 T&R
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Power Dissipation (Max): 800mW (Ta)
Rds On (Max) @ Id, Vgs: 90mOhm @ 2.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.3A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 2 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: SOT-23-3
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Technische Details DMP3165L-13 Diodes Incorporated
Description: MOSFET P-CH 30V 3.3A SOT23 T&R, Vgs(th) (Max) @ Id: 2.1V @ 250µA, Power Dissipation (Max): 800mW (Ta), Rds On (Max) @ Id, Vgs: 90mOhm @ 2.7A, 10V, Current - Continuous Drain (Id) @ 25°C: 3.3A (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 2 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: SOT-23-3.
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| Foto | Bezeichnung | Hersteller | Beschreibung |
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DMP3165L-13 | Hersteller : Diodes Incorporated |
MOSFET MOSFET BVDSS: 25V~30V SOT23 T&R 10K |
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