DMP31D1U-7 Diodes Incorporated
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 25V~30V SOT23 T&R
Rds On (Max) @ Id, Vgs: 1Ohm @ 400mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 620mA (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 54 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 1.6 nC @ 8 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Power Dissipation (Max): 460mW (Ta)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.063 EUR |
| 6000+ | 0.06 EUR |
| 9000+ | 0.051 EUR |
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Technische Details DMP31D1U-7 Diodes Incorporated
Description: MOSFET BVDSS: 25V~30V SOT23 T&R, Rds On (Max) @ Id, Vgs: 1Ohm @ 400mA, 4.5V, Current - Continuous Drain (Id) @ 25°C: 620mA (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 54 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 1.6 nC @ 8 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±8V, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Supplier Device Package: SOT-23-3, Vgs(th) (Max) @ Id: 1.1V @ 250µA, Power Dissipation (Max): 460mW (Ta).
Weitere Produktangebote DMP31D1U-7 nach Preis ab 0.076 EUR bis 0.36 EUR
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DMP31D1U-7 | Diodes Incorporated |
Description: MOSFET BVDSS: 25V~30V SOT23 T&R Input Capacitance (Ciss) (Max) @ Vds: 54 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 1.6 nC @ 8 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±8V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Supplier Device Package: SOT-23-3 Vgs(th) (Max) @ Id: 1.1V @ 250µA Power Dissipation (Max): 460mW (Ta) Rds On (Max) @ Id, Vgs: 1Ohm @ 400mA, 4.5V Current - Continuous Drain (Id) @ 25°C: 620mA (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) |
auf Bestellung 12357 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMP31D1U-7 |
|
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 25V~30V SOT23 T&R
Input Capacitance (Ciss) (Max) @ Vds: 54 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 1.6 nC @ 8 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Power Dissipation (Max): 460mW (Ta)
Rds On (Max) @ Id, Vgs: 1Ohm @ 400mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 620mA (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Description: MOSFET BVDSS: 25V~30V SOT23 T&R
Input Capacitance (Ciss) (Max) @ Vds: 54 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 1.6 nC @ 8 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Power Dissipation (Max): 460mW (Ta)
Rds On (Max) @ Id, Vgs: 1Ohm @ 400mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 620mA (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
auf Bestellung 12357 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 59+ | 0.36 EUR |
| 81+ | 0.26 EUR |
| 150+ | 0.14 EUR |
| 500+ | 0.11 EUR |
| 1000+ | 0.076 EUR |