DMP4015SSSQ-13 транзистор
Produktcode: 202812
zu Favoriten hinzufügen
Lieblingsprodukt
Hersteller:
Transistoren > Transistoren P-Kanal-Feld
Produktrezensionen
Produktbewertung abgeben
Weitere Produktangebote DMP4015SSSQ-13 транзистор nach Preis ab 0.78 EUR bis 3.17 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
DMP4015SSSQ-13 | DIODES INCORPORATED |
 Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -40V; -8.8A; 1.45W; SO8 Case: SO8 Kind of channel: enhancement Mounting: SMD Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -40V Drain current: -8.8A On-state resistance: 15mΩ Power dissipation: 1.45W Gate-source voltage: ±25V Kind of package: 13 inch reel; tape Application: automotive industry |
auf Bestellung 1680 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
 |
DMP4015SSSQ-13 | Diodes Incorporated |
MOSFETs P-Ch -40V 11mOhm 25Vgss 1.45W -10.1A |
auf Bestellung 4276 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
 |
DMP4015SSSQ-13 | Diodes Incorporated |
Description: MOSFET P-CH 40V 9.1A 8SO Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 9.1A (Ta) Rds On (Max) @ Id, Vgs: 11mOhm @ 9.8A, 10V Power Dissipation (Max): 1.45W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-SO Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 47.5 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 4234 pF @ 20 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 1066 Stücke: Lieferzeit 10-14 Tag (e) |
|
| DMP4015SSSQ-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -8.8A; 1.45W; SO8
Case: SO8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -8.8A
On-state resistance: 15mΩ
Power dissipation: 1.45W
Gate-source voltage: ±25V
Kind of package: 13 inch reel; tape
Application: automotive industry
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -8.8A; 1.45W; SO8
Case: SO8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -8.8A
On-state resistance: 15mΩ
Power dissipation: 1.45W
Gate-source voltage: ±25V
Kind of package: 13 inch reel; tape
Application: automotive industry
auf Bestellung 1680 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 36+ | 2.02 EUR |
| 56+ | 1.29 EUR |
| 100+ | 0.88 EUR |
| 250+ | 0.78 EUR |
| DMP4015SSSQ-13 |
|
Hersteller: Diodes Incorporated
MOSFETs P-Ch -40V 11mOhm 25Vgss 1.45W -10.1A
MOSFETs P-Ch -40V 11mOhm 25Vgss 1.45W -10.1A
auf Bestellung 4276 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 2.96 EUR |
| 10+ | 1.9 EUR |
| 100+ | 1.27 EUR |
| 500+ | 1.01 EUR |
| 1000+ | 0.92 EUR |
| 2500+ | 0.91 EUR |
| 5000+ | 0.88 EUR |
| DMP4015SSSQ-13 |
|
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 40V 9.1A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9.1A (Ta)
Rds On (Max) @ Id, Vgs: 11mOhm @ 9.8A, 10V
Power Dissipation (Max): 1.45W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 47.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 4234 pF @ 20 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET P-CH 40V 9.1A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9.1A (Ta)
Rds On (Max) @ Id, Vgs: 11mOhm @ 9.8A, 10V
Power Dissipation (Max): 1.45W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 47.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 4234 pF @ 20 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1066 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 6+ | 3.17 EUR |
| 10+ | 2.02 EUR |
| 100+ | 1.36 EUR |
| 500+ | 1.08 EUR |
| 1000+ | 0.99 EUR |