DMP4025LSD-13 Diodes Incorporated
Hersteller: Diodes Incorporated
Description: MOSFET 2P-CH 40V 6.9A 8SO
Power - Max: 1.8W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Part Status: Active
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 1.8V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 33.7nC @ 10V
Rds On (Max) @ Id, Vgs: 25mOhm @ 3A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1640pF @ 20V
Current - Continuous Drain (Id) @ 25°C: 6.9A
Drain to Source Voltage (Vdss): 40V
| Anzahl | Preis |
|---|---|
| 2500+ | 0.54 EUR |
| 5000+ | 0.5 EUR |
| 7500+ | 0.48 EUR |
| 12500+ | 0.47 EUR |
Produktrezensionen
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Technische Details DMP4025LSD-13 Diodes Incorporated
Description: DIODES INC. - DMP4025LSD-13 - Dual-MOSFET, p-Kanal, 40 V, 40 V, 7.6 A, 7.6 A, 0.018 ohm, tariffCode: 85412900, rohsCompliant: YES, Dauer-Drainstrom Id, p-Kanal: 7.6A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, isCanonical: Y, Drain-Source-Spannung Vds, p-Kanal: 40V, MSL: MSL 1 - unbegrenzt, usEccn: EAR99, Dauer-Drainstrom Id, n-Kanal: 7.6A, Drain-Source-Durchgangswiderstand, p-Kanal: 0.018ohm, Verlustleistung, p-Kanal: 1.8W, Drain-Source-Spannung Vds, n-Kanal: 40V, euEccn: NLR, Bauform - Transistor: SOIC, Anzahl der Pins: 8Pin(s), Produktpalette: -, Drain-Source-Durchgangswiderstand, n-Kanal: 0.018ohm, productTraceability: Yes-Date/Lot Code, Kanaltyp: p-Kanal, Verlustleistung, n-Kanal: 1.8W, Betriebstemperatur, max.: 150°C, SVHC: No SVHC (25-Jun-2025).
Weitere Produktangebote DMP4025LSD-13 nach Preis ab 0.56 EUR bis 2.08 EUR
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DMP4025LSD-13 | Diodes Incorporated |
MOSFETs P-Ch Enh Mode FET 40V 25mOhm -7.6A |
auf Bestellung 16639 Stücke: Lieferzeit 10-14 Tag (e) |
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DMP4025LSD-13 | Diodes Incorporated |
Description: MOSFET 2P-CH 40V 6.9A 8SO Part Status: Active Supplier Device Package: 8-SO Vgs(th) (Max) @ Id: 1.8V @ 250µA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 33.7nC @ 10V Rds On (Max) @ Id, Vgs: 25mOhm @ 3A, 10V Input Capacitance (Ciss) (Max) @ Vds: 1640pF @ 20V Current - Continuous Drain (Id) @ 25°C: 6.9A Drain to Source Voltage (Vdss): 40V Power - Max: 1.8W Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 P-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) |
auf Bestellung 119545 Stücke: Lieferzeit 10-14 Tag (e) |
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DMP4025LSD-13 | DIODES INC. |
Description: DIODES INC. - DMP4025LSD-13 - Dual-MOSFET, p-Kanal, 40 V, 40 V, 7.6 A, 7.6 A, 0.018 ohm tariffCode: 85412900 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 7.6A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: Y Drain-Source-Spannung Vds, p-Kanal: 40V MSL: MSL 1 - unbegrenzt usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 7.6A Drain-Source-Durchgangswiderstand, p-Kanal: 0.018ohm Verlustleistung, p-Kanal: 1.8W Drain-Source-Spannung Vds, n-Kanal: 40V euEccn: NLR Bauform - Transistor: SOIC Anzahl der Pins: 8Pin(s) Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 0.018ohm productTraceability: Yes-Date/Lot Code Kanaltyp: p-Kanal Verlustleistung, n-Kanal: 1.8W Betriebstemperatur, max.: 150°C SVHC: No SVHC (25-Jun-2025) |
auf Bestellung 520 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 5 Stücke Im Einkaufswagen Stück im Wert von UAH |
| DMP4025LSD-13 |
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Hersteller: Diodes Incorporated
MOSFETs P-Ch Enh Mode FET 40V 25mOhm -7.6A
MOSFETs P-Ch Enh Mode FET 40V 25mOhm -7.6A
auf Bestellung 16639 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 1.83 EUR |
| 10+ | 1.37 EUR |
| 100+ | 0.86 EUR |
| 500+ | 0.71 EUR |
| 1000+ | 0.64 EUR |
| 2500+ | 0.56 EUR |
| DMP4025LSD-13 |
|
Hersteller: Diodes Incorporated
Description: MOSFET 2P-CH 40V 6.9A 8SO
Part Status: Active
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 1.8V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 33.7nC @ 10V
Rds On (Max) @ Id, Vgs: 25mOhm @ 3A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1640pF @ 20V
Current - Continuous Drain (Id) @ 25°C: 6.9A
Drain to Source Voltage (Vdss): 40V
Power - Max: 1.8W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Description: MOSFET 2P-CH 40V 6.9A 8SO
Part Status: Active
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 1.8V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 33.7nC @ 10V
Rds On (Max) @ Id, Vgs: 25mOhm @ 3A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1640pF @ 20V
Current - Continuous Drain (Id) @ 25°C: 6.9A
Drain to Source Voltage (Vdss): 40V
Power - Max: 1.8W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
auf Bestellung 119545 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 9+ | 2.08 EUR |
| 14+ | 1.31 EUR |
| 100+ | 0.87 EUR |
| 500+ | 0.68 EUR |
| 1000+ | 0.62 EUR |
| DMP4025LSD-13 |
|
Hersteller: DIODES INC.
Description: DIODES INC. - DMP4025LSD-13 - Dual-MOSFET, p-Kanal, 40 V, 40 V, 7.6 A, 7.6 A, 0.018 ohm
tariffCode: 85412900
rohsCompliant: YES
Dauer-Drainstrom Id, p-Kanal: 7.6A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
Drain-Source-Spannung Vds, p-Kanal: 40V
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Dauer-Drainstrom Id, n-Kanal: 7.6A
Drain-Source-Durchgangswiderstand, p-Kanal: 0.018ohm
Verlustleistung, p-Kanal: 1.8W
Drain-Source-Spannung Vds, n-Kanal: 40V
euEccn: NLR
Bauform - Transistor: SOIC
Anzahl der Pins: 8Pin(s)
Produktpalette: -
Drain-Source-Durchgangswiderstand, n-Kanal: 0.018ohm
productTraceability: Yes-Date/Lot Code
Kanaltyp: p-Kanal
Verlustleistung, n-Kanal: 1.8W
Betriebstemperatur, max.: 150°C
SVHC: No SVHC (25-Jun-2025)
Description: DIODES INC. - DMP4025LSD-13 - Dual-MOSFET, p-Kanal, 40 V, 40 V, 7.6 A, 7.6 A, 0.018 ohm
tariffCode: 85412900
rohsCompliant: YES
Dauer-Drainstrom Id, p-Kanal: 7.6A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
Drain-Source-Spannung Vds, p-Kanal: 40V
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Dauer-Drainstrom Id, n-Kanal: 7.6A
Drain-Source-Durchgangswiderstand, p-Kanal: 0.018ohm
Verlustleistung, p-Kanal: 1.8W
Drain-Source-Spannung Vds, n-Kanal: 40V
euEccn: NLR
Bauform - Transistor: SOIC
Anzahl der Pins: 8Pin(s)
Produktpalette: -
Drain-Source-Durchgangswiderstand, n-Kanal: 0.018ohm
productTraceability: Yes-Date/Lot Code
Kanaltyp: p-Kanal
Verlustleistung, n-Kanal: 1.8W
Betriebstemperatur, max.: 150°C
SVHC: No SVHC (25-Jun-2025)
auf Bestellung 520 Stücke:
Lieferzeit 14-21 Tag (e)