auf Bestellung 37500 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 2500+ | 0.34 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details DMP4047SSD-13 Diodes Zetex
Description: MOSFET 2P-CH 40V 5.1A 8SO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 P-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.3W, Drain to Source Voltage (Vdss): 40V, Current - Continuous Drain (Id) @ 25°C: 5.1A, Input Capacitance (Ciss) (Max) @ Vds: 1154pF @ 20V, Rds On (Max) @ Id, Vgs: 45mOhm @ 4.4A, 10V, Gate Charge (Qg) (Max) @ Vgs: 21.5nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: 8-SO, Part Status: Active.
Weitere Produktangebote DMP4047SSD-13 nach Preis ab 0.29 EUR bis 1.07 EUR
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DMP4047SSD-13 | Hersteller : Diodes Zetex |
 Trans MOSFET P-CH 40V 5.1A 8-Pin SO T/R |
auf Bestellung 35000 Stücke: Lieferzeit 14-21 Tag (e) |
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DMP4047SSD-13 | Hersteller : Diodes Zetex |
Trans MOSFET P-CH 40V 5.1A 8-Pin SO T/R |
auf Bestellung 35000 Stücke: Lieferzeit 14-21 Tag (e) |
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DMP4047SSD-13 | Hersteller : Diodes Incorporated |
Description: MOSFET 2P-CH 40V 5.1A 8SO Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.3W Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 5.1A Input Capacitance (Ciss) (Max) @ Vds: 1154pF @ 20V Rds On (Max) @ Id, Vgs: 45mOhm @ 4.4A, 10V Gate Charge (Qg) (Max) @ Vgs: 21.5nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SO Part Status: Active |
auf Bestellung 235000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMP4047SSD-13 | Hersteller : Diodes Zetex |
Trans MOSFET P-CH 40V 5.1A 8-Pin SO T/R |
auf Bestellung 2150 Stücke: Lieferzeit 14-21 Tag (e) |
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DMP4047SSD-13 | Hersteller : Diodes Zetex |
Trans MOSFET P-CH 40V 5.1A 8-Pin SO T/R |
auf Bestellung 2150 Stücke: Lieferzeit 14-21 Tag (e) |
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DMP4047SSD-13 | Hersteller : Diodes Incorporated |
MOSFETs Dual P-Ch -40V ENH Min RDSon -20VGss |
auf Bestellung 8272 Stücke: Lieferzeit 10-14 Tag (e) |
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DMP4047SSD-13 | Hersteller : Diodes Incorporated |
Description: MOSFET 2P-CH 40V 5.1A 8SO Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.3W Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 5.1A Input Capacitance (Ciss) (Max) @ Vds: 1154pF @ 20V Rds On (Max) @ Id, Vgs: 45mOhm @ 4.4A, 10V Gate Charge (Qg) (Max) @ Vgs: 21.5nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SO Part Status: Active |
auf Bestellung 237497 Stücke: Lieferzeit 10-14 Tag (e) |
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DMP4047SSD-13 | Hersteller : Diodes Inc |
Trans MOSFET P-CH 40V 5.1A 8-Pin SO T/R |
auf Bestellung 35000 Stücke: Lieferzeit 14-21 Tag (e) |
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DMP4047SSD-13 | Hersteller : Diodes Zetex |
Trans MOSFET P-CH 40V 5.1A 8-Pin SO T/R |
Produkt ist nicht verfügbar |
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DMP4047SSD-13 | Hersteller : DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -40V; -5.2A; Idm: -26A; 1.1W; SO8 Mounting: SMD Case: SO8 Drain-source voltage: -40V Drain current: -5.2A On-state resistance: 55mΩ Type of transistor: P-MOSFET Power dissipation: 1.1W Polarisation: unipolar Kind of package: 13 inch reel; tape Gate charge: 21.5nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: -26A Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
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DMP4047SSD-13 | Hersteller : DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -40V; -5.2A; Idm: -26A; 1.1W; SO8 Mounting: SMD Case: SO8 Drain-source voltage: -40V Drain current: -5.2A On-state resistance: 55mΩ Type of transistor: P-MOSFET Power dissipation: 1.1W Polarisation: unipolar Kind of package: 13 inch reel; tape Gate charge: 21.5nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: -26A |
Produkt ist nicht verfügbar |