DMP6023LFGQ-13 Diodes Zetex
auf Bestellung 60000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.42 EUR |
| 6000+ | 0.4 EUR |
| 9000+ | 0.38 EUR |
| 30000+ | 0.36 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details DMP6023LFGQ-13 Diodes Zetex
Description: MOSFET P-CH 60V 7.7A PWRDI3333-8, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 155°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 7.7A (Ta), Rds On (Max) @ Id, Vgs: 25mOhm @ 5A, 10V, Power Dissipation (Max): 1W (Ta), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: PowerDI3333-8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 53.1 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2569 pF @ 30 V, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote DMP6023LFGQ-13 nach Preis ab 0.5 EUR bis 1.88 EUR
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DMP6023LFGQ-13 | Hersteller : Diodes Incorporated |
 Description: MOSFET P-CH 60V 7.7A PWRDI3333-8Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 155°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 7.7A (Ta) Rds On (Max) @ Id, Vgs: 25mOhm @ 5A, 10V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerDI3333-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 53.1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2569 pF @ 30 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 2565000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMP6023LFGQ-13 | Hersteller : Diodes Zetex |
Trans MOSFET P-CH 60V 7.7A Automotive AEC-Q101 8-Pin PowerDI EP T/R |
auf Bestellung 102000 Stücke: Lieferzeit 14-21 Tag (e) |
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DMP6023LFGQ-13 | Hersteller : Diodes Incorporated |
Description: MOSFET P-CH 60V 7.7A PWRDI3333-8 Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 155°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 7.7A (Ta) Rds On (Max) @ Id, Vgs: 25mOhm @ 5A, 10V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerDI3333-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 53.1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2569 pF @ 30 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 2566589 Stücke: Lieferzeit 10-14 Tag (e) |
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DMP6023LFGQ-13 | Hersteller : Diodes Incorporated |
MOSFET MOSFET BVDSS: 41V-60V |
auf Bestellung 12626 Stücke: Lieferzeit 14-28 Tag (e) |
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DMP6023LFGQ-13 | Hersteller : Diodes Inc |
Trans MOSFET P-CH 60V 7.7A Automotive 8-Pin PowerDI EP T/R |
auf Bestellung 60000 Stücke: Lieferzeit 14-21 Tag (e) |
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DMP6023LFGQ-13 | Hersteller : Diodes Zetex |
Trans MOSFET P-CH 60V 7.7A Automotive AEC-Q101 8-Pin PowerDI EP T/R |
Produkt ist nicht verfügbar |
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| DMP6023LFGQ-13 | Hersteller : DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -8.2A; Idm: -55A; 2.1W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -8.2A Pulsed drain current: -55A Power dissipation: 2.1W Case: PowerDI3333-8 Gate-source voltage: ±20V On-state resistance: 33mΩ Mounting: SMD Gate charge: 53.1nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| DMP6023LFGQ-13 | Hersteller : DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -8.2A; Idm: -55A; 2.1W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -8.2A Pulsed drain current: -55A Power dissipation: 2.1W Case: PowerDI3333-8 Gate-source voltage: ±20V On-state resistance: 33mΩ Mounting: SMD Gate charge: 53.1nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |