DMP610DL-13
Produktcode: 219804
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Weitere Produktangebote DMP610DL-13 nach Preis ab 0.07 EUR bis 0.42 EUR
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DMP610DL-13 | Diodes Incorporated |
Description: MOSFET BVDSS: 41V 60V SOT23 T&RPackaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 180mA (Ta) Rds On (Max) @ Id, Vgs: 10Ohm @ 100mA, 5V Power Dissipation (Max): 310mW (Ta) Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: SOT-23-3 Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 0.56 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 24.6 pF @ 25 V |
auf Bestellung 10000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMP610DL-13 | Diodes Incorporated |
Description: MOSFET BVDSS: 41V 60V SOT23 T&RPackaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 180mA (Ta) Rds On (Max) @ Id, Vgs: 10Ohm @ 100mA, 5V Power Dissipation (Max): 310mW (Ta) Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: SOT-23-3 Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 0.56 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 24.6 pF @ 25 V |
auf Bestellung 10838 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMP610DL-13 |
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Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 41V 60V SOT23 T&R
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 180mA (Ta)
Rds On (Max) @ Id, Vgs: 10Ohm @ 100mA, 5V
Power Dissipation (Max): 310mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 24.6 pF @ 25 V
Description: MOSFET BVDSS: 41V 60V SOT23 T&R
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 180mA (Ta)
Rds On (Max) @ Id, Vgs: 10Ohm @ 100mA, 5V
Power Dissipation (Max): 310mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 24.6 pF @ 25 V
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 10000+ | 0.07 EUR |
| DMP610DL-13 |
![]() |
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 41V 60V SOT23 T&R
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 180mA (Ta)
Rds On (Max) @ Id, Vgs: 10Ohm @ 100mA, 5V
Power Dissipation (Max): 310mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 24.6 pF @ 25 V
Description: MOSFET BVDSS: 41V 60V SOT23 T&R
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 180mA (Ta)
Rds On (Max) @ Id, Vgs: 10Ohm @ 100mA, 5V
Power Dissipation (Max): 310mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 24.6 pF @ 25 V
auf Bestellung 10838 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 50+ | 0.42 EUR |
| 81+ | 0.26 EUR |
| 99+ | 0.21 EUR |
| 114+ | 0.19 EUR |
| 131+ | 0.17 EUR |
Mit diesem Produkt kaufen
| CLM-107-02-H-D-K-TR Produktcode: 219803
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