DMP6110SSS-13
Produktcode: 206035
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Weitere Produktangebote DMP6110SSS-13 nach Preis ab 0.26 EUR bis 1.23 EUR
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DMP6110SSS-13 | Diodes Incorporated |
Description: MOSFET P-CH 60V 8SOIC Input Capacitance (Ciss) (Max) @ Vds: 1030 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 19.4 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: 8-SO Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 1.5W (Ta) Rds On (Max) @ Id, Vgs: 110mOhm @ 4.5A, 10V Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) |
auf Bestellung 15000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMP6110SSS-13 | Diodes Incorporated |
MOSFETs 60V P-Ch 60Vds 20Vgs FET 1030pF 19.4nC |
auf Bestellung 17349 Stücke: Lieferzeit 10-14 Tag (e) |
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DMP6110SSS-13 | Diodes Incorporated |
Description: MOSFET P-CH 60V 8SOIC Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta) Rds On (Max) @ Id, Vgs: 110mOhm @ 4.5A, 10V Power Dissipation (Max): 1.5W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SO Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 19.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1030 pF @ 30 V |
auf Bestellung 17274 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMP6110SSS-13 |
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Hersteller: Diodes Incorporated
Description: MOSFET P-CH 60V 8SOIC
Input Capacitance (Ciss) (Max) @ Vds: 1030 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 19.4 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.5W (Ta)
Rds On (Max) @ Id, Vgs: 110mOhm @ 4.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Description: MOSFET P-CH 60V 8SOIC
Input Capacitance (Ciss) (Max) @ Vds: 1030 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 19.4 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.5W (Ta)
Rds On (Max) @ Id, Vgs: 110mOhm @ 4.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2500+ | 0.29 EUR |
| 5000+ | 0.28 EUR |
| 7500+ | 0.26 EUR |
| DMP6110SSS-13 |
|
Hersteller: Diodes Incorporated
MOSFETs 60V P-Ch 60Vds 20Vgs FET 1030pF 19.4nC
MOSFETs 60V P-Ch 60Vds 20Vgs FET 1030pF 19.4nC
auf Bestellung 17349 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 1.18 EUR |
| 10+ | 0.78 EUR |
| 100+ | 0.47 EUR |
| 500+ | 0.39 EUR |
| 1000+ | 0.35 EUR |
| 2500+ | 0.28 EUR |
| 5000+ | 0.27 EUR |
| DMP6110SSS-13 |
|
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 60V 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Rds On (Max) @ Id, Vgs: 110mOhm @ 4.5A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 19.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1030 pF @ 30 V
Description: MOSFET P-CH 60V 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Rds On (Max) @ Id, Vgs: 110mOhm @ 4.5A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 19.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1030 pF @ 30 V
auf Bestellung 17274 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 15+ | 1.23 EUR |
| 23+ | 0.79 EUR |
| 100+ | 0.5 EUR |
| 500+ | 0.39 EUR |
| 1000+ | 0.35 EUR |
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