DMP6250SEQ-13 Diodes Incorporated

Description: MOSFET BVDSS: 41V~60V SOT223 T&R
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.1A (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 1A, 10V
Power Dissipation (Max): 1.8W (Ta), 14W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-223-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 9.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 551 pF @ 30 V
Qualification: AEC-Q101
auf Bestellung 260000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis |
---|---|
2500+ | 0.25 EUR |
5000+ | 0.23 EUR |
7500+ | 0.22 EUR |
12500+ | 0.20 EUR |
25000+ | 0.19 EUR |
62500+ | 0.18 EUR |
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Technische Details DMP6250SEQ-13 Diodes Incorporated
Description: MOSFET BVDSS: 41V~60V SOT223 T&R, Packaging: Tape & Reel (TR), Package / Case: TO-261-4, TO-261AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 6.1A (Tc), Rds On (Max) @ Id, Vgs: 250mOhm @ 1A, 10V, Power Dissipation (Max): 1.8W (Ta), 14W (Tc), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: SOT-223-3, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 9.7 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 551 pF @ 30 V, Qualification: AEC-Q101.
Weitere Produktangebote DMP6250SEQ-13 nach Preis ab 0.19 EUR bis 0.85 EUR
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DMP6250SEQ-13 | Hersteller : Diodes Incorporated |
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auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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DMP6250SEQ-13 | Hersteller : Diodes Inc |
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