Technische Details DMP68D1LFB-7B Diodes Incorporated
Category: SMD P channel transistors, Description: Transistor: P-MOSFET; unipolar; -65V; -230mA; Idm: -0.8A; 1.2W, Case: X1-DFN1006-3, Mounting: SMD, Kind of package: 7 inch reel; tape, Gate-source voltage: ±20V, On-state resistance: 18Ω, Pulsed drain current: -0.8A, Power dissipation: 1.2W, Gate charge: 0.6nC, Polarisation: unipolar, Drain current: -0.23A, Kind of channel: enhancement, Drain-source voltage: -65V, Type of transistor: P-MOSFET.
Weitere Produktangebote DMP68D1LFB-7B
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
| DMP68D1LFB-7B | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -65V; -230mA; Idm: -0.8A; 1.2W Case: X1-DFN1006-3 Mounting: SMD Kind of package: 7 inch reel; tape Gate-source voltage: ±20V On-state resistance: 18Ω Pulsed drain current: -0.8A Power dissipation: 1.2W Gate charge: 0.6nC Polarisation: unipolar Drain current: -0.23A Kind of channel: enhancement Drain-source voltage: -65V Type of transistor: P-MOSFET |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| DMP68D1LFB-7B |
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -65V; -230mA; Idm: -0.8A; 1.2W
Case: X1-DFN1006-3
Mounting: SMD
Kind of package: 7 inch reel; tape
Gate-source voltage: ±20V
On-state resistance: 18Ω
Pulsed drain current: -0.8A
Power dissipation: 1.2W
Gate charge: 0.6nC
Polarisation: unipolar
Drain current: -0.23A
Kind of channel: enhancement
Drain-source voltage: -65V
Type of transistor: P-MOSFET
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -65V; -230mA; Idm: -0.8A; 1.2W
Case: X1-DFN1006-3
Mounting: SMD
Kind of package: 7 inch reel; tape
Gate-source voltage: ±20V
On-state resistance: 18Ω
Pulsed drain current: -0.8A
Power dissipation: 1.2W
Gate charge: 0.6nC
Polarisation: unipolar
Drain current: -0.23A
Kind of channel: enhancement
Drain-source voltage: -65V
Type of transistor: P-MOSFET
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
Im Einkaufswagen
Stück im Wert von UAH


