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DMPH1006UPS-13

DMPH1006UPS-13 Diodes Incorporated

DMPH1006UPS.pdf Hersteller: Diodes Incorporated
Description: MOSFET P-CH 12V 80A PWRDI5060-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 15A, 4.5V
Power Dissipation (Max): 3.2W
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: PowerDI5060-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 6334 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.61 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details DMPH1006UPS-13 Diodes Incorporated

Description: MOSFET P-CH 12V 80A PWRDI5060-8, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 80A (Tc), Rds On (Max) @ Id, Vgs: 6mOhm @ 15A, 4.5V, Power Dissipation (Max): 3.2W, Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: PowerDI5060-8, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 12 V, Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 8 V, Input Capacitance (Ciss) (Max) @ Vds: 6334 pF @ 10 V, Qualification: AEC-Q101.

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DMPH1006UPS-13 DMPH1006UPS-13 Hersteller : Diodes Incorporated DMPH1006UPS.pdf Description: MOSFET P-CH 12V 80A PWRDI5060-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 15A, 4.5V
Power Dissipation (Max): 3.2W
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: PowerDI5060-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 6334 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 4984 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
13+1.39 EUR
16+1.14 EUR
100+0.89 EUR
500+0.75 EUR
1000+0.61 EUR
Mindestbestellmenge: 13
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DMPH1006UPS-13 DMPH1006UPS-13 Hersteller : Diodes Incorporated DIOD_S_A0003100891_1-2542334.pdf MOSFETs MOSFET BVDSS: 8V-24V
auf Bestellung 2396 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+1.47 EUR
10+1.21 EUR
100+0.88 EUR
500+0.71 EUR
1000+0.65 EUR
2500+0.59 EUR
Mindestbestellmenge: 2
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DMPH1006UPS-13 DMPH1006UPS-13 Hersteller : Diodes Inc 29dmph1006ups.pdf Trans MOSFET P-CH 12V 80A 8-Pin PowerDI EP T/R
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DMPH1006UPS-13 Hersteller : DIODES INCORPORATED DMPH1006UPS.pdf DMPH1006UPS-13 SMD P channel transistors
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