Produktrezensionen
Produktbewertung abgeben
Technische Details DMPH4015SPS-13 Diodes Zetex
Description: MOSFET P-CH 40V 50A PWRDI5060-8, Input Capacitance (Ciss) (Max) @ Vds: 4234 pF @ 20 V, Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±25V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: PowerDI5060-8, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Power Dissipation (Max): 2.6W (Ta), Rds On (Max) @ Id, Vgs: 11mOhm @ 9.8A, 10V, Current - Continuous Drain (Id) @ 25°C: 50A (Tc), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Qualification: AEC-Q101, Grade: Automotive, Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerTDFN, Packaging: Tape & Reel (TR).
Weitere Produktangebote DMPH4015SPS-13 nach Preis ab 0.93 EUR bis 0.98 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||
|---|---|---|---|---|---|---|---|---|---|
| DMPH4015SPS-13 | Diodes Incorporated |
Description: MOSFET P-CH 40V 50A PWRDI5060-8 Input Capacitance (Ciss) (Max) @ Vds: 4234 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±25V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: PowerDI5060-8 Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 2.6W (Ta) Rds On (Max) @ Id, Vgs: 11mOhm @ 9.8A, 10V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Qualification: AEC-Q101 Grade: Automotive Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Tape & Reel (TR) |
auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
|
| DMPH4015SPS-13 |
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 40V 50A PWRDI5060-8
Input Capacitance (Ciss) (Max) @ Vds: 4234 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PowerDI5060-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 2.6W (Ta)
Rds On (Max) @ Id, Vgs: 11mOhm @ 9.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Qualification: AEC-Q101
Grade: Automotive
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Description: MOSFET P-CH 40V 50A PWRDI5060-8
Input Capacitance (Ciss) (Max) @ Vds: 4234 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PowerDI5060-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 2.6W (Ta)
Rds On (Max) @ Id, Vgs: 11mOhm @ 9.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Qualification: AEC-Q101
Grade: Automotive
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2500+ | 0.98 EUR |
| 5000+ | 0.93 EUR |