DMPH6050SFG-7 Diodes Incorporated

Description: MOSFET BVDSS: 41V-60V POWERDI333, Input Capacitance (Ciss) (Max) @ Vds: 1293 pF @ 30 V, Gate Charge (Qg) (Max) @ Vgs: 24.1 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs(th) (Max) @ Id: 3V @ 250µA, Power Dissipation (Max): 3.2W, Rds On (Max) @ Id, Vgs: 50mOhm @ 7A, 10V, Current - Continuous Drain (Id) @ 25°C: 6.1A (Ta), 18A (Tc), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Packaging: Tape & Reel (TR).