Produktrezensionen
Produktbewertung abgeben
Technische Details DMPH6050SFG-7 Diodes Zetex
Description: MOSFET BVDSS: 41V-60V POWERDI333, Input Capacitance (Ciss) (Max) @ Vds: 1293 pF @ 30 V, Gate Charge (Qg) (Max) @ Vgs: 24.1 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs(th) (Max) @ Id: 3V @ 250µA, Power Dissipation (Max): 3.2W, Rds On (Max) @ Id, Vgs: 50mOhm @ 7A, 10V, Current - Continuous Drain (Id) @ 25°C: 6.1A (Ta), 18A (Tc), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Packaging: Tape & Reel (TR).
Weitere Produktangebote DMPH6050SFG-7 nach Preis ab 0.43 EUR bis 0.49 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||
|---|---|---|---|---|---|---|---|---|---|---|---|
| DMPH6050SFG-7 | Diodes Incorporated |
Description: MOSFET BVDSS: 41V-60V POWERDI333Input Capacitance (Ciss) (Max) @ Vds: 1293 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 24.1 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 3.2W Rds On (Max) @ Id, Vgs: 50mOhm @ 7A, 10V Current - Continuous Drain (Id) @ 25°C: 6.1A (Ta), 18A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Packaging: Tape & Reel (TR) |
auf Bestellung 12000 Stücke: Lieferzeit 10-14 Tag (e) |
|
| DMPH6050SFG-7 |
![]() |
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 41V-60V POWERDI333
Input Capacitance (Ciss) (Max) @ Vds: 1293 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 24.1 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 3.2W
Rds On (Max) @ Id, Vgs: 50mOhm @ 7A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.1A (Ta), 18A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Packaging: Tape & Reel (TR)
Description: MOSFET BVDSS: 41V-60V POWERDI333
Input Capacitance (Ciss) (Max) @ Vds: 1293 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 24.1 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 3.2W
Rds On (Max) @ Id, Vgs: 50mOhm @ 7A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.1A (Ta), 18A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Packaging: Tape & Reel (TR)
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2000+ | 0.49 EUR |
| 6000+ | 0.45 EUR |
| 10000+ | 0.43 EUR |

