DMPH6050SFGQ-13 Diodes Incorporated
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 60V PWRDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.1A (Ta), 18A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 7A, 10V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 24.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1293 pF @ 30 V
Qualification: AEC-Q101
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.46 EUR |
Artikel auf Bestellung
Nicht an unserem Lager — wir beziehen ihn nach Ihrer Bestellung vom Lieferantenlager.
Lieferzeit:
10-14 Tag (e)
Mindestmenge:
3000 Stücke
Produktrezensionen
Produktbewertung abgeben
Technische Details DMPH6050SFGQ-13 Diodes Incorporated
Description: MOSFET P-CH 60V PWRDI3333, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 6.1A (Ta), 18A (Tc), Rds On (Max) @ Id, Vgs: 50mOhm @ 7A, 10V, Power Dissipation (Max): 1.2W (Ta), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: PowerDI3333-8, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 24.1 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1293 pF @ 30 V, Qualification: AEC-Q101.
Weitere Produktangebote DMPH6050SFGQ-13 nach Preis ab 0.51 EUR bis 1.93 EUR
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DMPH6050SFGQ-13 | Diodes Zetex |
Trans MOSFET P-CH 60V 6.1A 8-Pin PowerDI EP T/R Automotive AEC-Q101 |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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DMPH6050SFGQ-13 | Diodes Zetex |
Trans MOSFET P-CH 60V 6.1A 8-Pin PowerDI EP T/R Automotive AEC-Q101 |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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DMPH6050SFGQ-13 | Diodes Incorporated |
MOSFETs MOSFET BVDSS: 41V-60V |
auf Bestellung 2671 Stücke: Lieferzeit 10-14 Tag (e) |
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DMPH6050SFGQ-13 | Diodes Incorporated |
Description: MOSFET P-CH 60V PWRDI3333 Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 6.1A (Ta), 18A (Tc) Rds On (Max) @ Id, Vgs: 50mOhm @ 7A, 10V Power Dissipation (Max): 1.2W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerDI3333-8 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 24.1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1293 pF @ 30 V Qualification: AEC-Q101 |
auf Bestellung 4286 Stücke: Lieferzeit 10-14 Tag (e) |
|
| DMPH6050SFGQ-13 |
|
Hersteller: Diodes Zetex
Trans MOSFET P-CH 60V 6.1A 8-Pin PowerDI EP T/R Automotive AEC-Q101
Trans MOSFET P-CH 60V 6.1A 8-Pin PowerDI EP T/R Automotive AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.51 EUR |
| DMPH6050SFGQ-13 |
|
Hersteller: Diodes Zetex
Trans MOSFET P-CH 60V 6.1A 8-Pin PowerDI EP T/R Automotive AEC-Q101
Trans MOSFET P-CH 60V 6.1A 8-Pin PowerDI EP T/R Automotive AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.51 EUR |
| DMPH6050SFGQ-13 |
|
Hersteller: Diodes Incorporated
MOSFETs MOSFET BVDSS: 41V-60V
MOSFETs MOSFET BVDSS: 41V-60V
auf Bestellung 2671 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 1.83 EUR |
| 10+ | 1.32 EUR |
| 100+ | 0.9 EUR |
| 500+ | 0.74 EUR |
| 1000+ | 0.69 EUR |
| 3000+ | 0.57 EUR |
| 6000+ | 0.54 EUR |
| DMPH6050SFGQ-13 |
|
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 60V PWRDI3333
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.1A (Ta), 18A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 7A, 10V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 24.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1293 pF @ 30 V
Qualification: AEC-Q101
Description: MOSFET P-CH 60V PWRDI3333
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.1A (Ta), 18A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 7A, 10V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 24.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1293 pF @ 30 V
Qualification: AEC-Q101
auf Bestellung 4286 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 11+ | 1.93 EUR |
| 18+ | 1.21 EUR |
| 100+ | 0.8 EUR |
| 500+ | 0.62 EUR |
| 1000+ | 0.56 EUR |