DMPH6050SFGQ-13 Diodes Incorporated
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 60V PWRDI3333
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 1293 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 24.1 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: PowerDI3333-8
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.2W (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 7A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.1A (Ta), 18A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Produktrezensionen
Produktbewertung abgeben
Technische Details DMPH6050SFGQ-13 Diodes Incorporated
Description: MOSFET P-CH 60V PWRDI3333, Qualification: AEC-Q101, Input Capacitance (Ciss) (Max) @ Vds: 1293 pF @ 30 V, Gate Charge (Qg) (Max) @ Vgs: 24.1 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Grade: Automotive, Supplier Device Package: PowerDI3333-8, Vgs(th) (Max) @ Id: 3V @ 250µA, Power Dissipation (Max): 1.2W (Ta), Rds On (Max) @ Id, Vgs: 50mOhm @ 7A, 10V, Current - Continuous Drain (Id) @ 25°C: 6.1A (Ta), 18A (Tc), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerVDFN, Packaging: Tape & Reel (TR).
Weitere Produktangebote DMPH6050SFGQ-13 nach Preis ab 0.45 EUR bis 1.62 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
DMPH6050SFGQ-13 | Diodes Incorporated |
MOSFETs MOSFET BVDSS: 41V-60V |
auf Bestellung 2671 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
|
DMPH6050SFGQ-13 | Diodes Incorporated |
Description: MOSFET P-CH 60V PWRDI3333Qualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 1293 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 24.1 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Grade: Automotive Supplier Device Package: PowerDI3333-8 Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 1.2W (Ta) Rds On (Max) @ Id, Vgs: 50mOhm @ 7A, 10V Current - Continuous Drain (Id) @ 25°C: 6.1A (Ta), 18A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Cut Tape (CT) |
auf Bestellung 4286 Stücke: Lieferzeit 10-14 Tag (e) |
|
| DMPH6050SFGQ-13 |
![]() |
Hersteller: Diodes Incorporated
MOSFETs MOSFET BVDSS: 41V-60V
MOSFETs MOSFET BVDSS: 41V-60V
auf Bestellung 2671 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 1.54 EUR |
| 10+ | 1.11 EUR |
| 100+ | 0.76 EUR |
| 500+ | 0.62 EUR |
| 1000+ | 0.58 EUR |
| 3000+ | 0.48 EUR |
| 6000+ | 0.45 EUR |
| DMPH6050SFGQ-13 |
![]() |
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 60V PWRDI3333
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 1293 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 24.1 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: PowerDI3333-8
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.2W (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 7A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.1A (Ta), 18A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
Description: MOSFET P-CH 60V PWRDI3333
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 1293 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 24.1 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: PowerDI3333-8
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.2W (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 7A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.1A (Ta), 18A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
auf Bestellung 4286 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 11+ | 1.62 EUR |
| 18+ | 1.02 EUR |
| 100+ | 0.67 EUR |
| 500+ | 0.52 EUR |
| 1000+ | 0.47 EUR |


