DMPH6050SPD-13 Diodes Incorporated
Hersteller: Diodes Incorporated
Description: MOSFET 2P-CH 26A POWERDI5060-8
Qualification: AEC-Q101
Grade: Automotive
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Part Status: Active
Supplier Device Package: PowerDI5060-8
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 14.5nC @ 4.5V
Rds On (Max) @ Id, Vgs: 48mOhm @ 5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1525pF @ 30V
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Technology: MOSFET (Metal Oxide)
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Technische Details DMPH6050SPD-13 Diodes Incorporated
Description: MOSFET 2P-CH 26A POWERDI5060-8, Qualification: AEC-Q101, Grade: Automotive, Operating Temperature: -55°C ~ 175°C (TJ), Configuration: 2 P-Channel (Dual), Mounting Type: Surface Mount, Package / Case: 8-PowerTDFN, Packaging: Tape & Reel (TR), Part Status: Active, Supplier Device Package: PowerDI5060-8, Vgs(th) (Max) @ Id: 3V @ 250µA, Gate Charge (Qg) (Max) @ Vgs: 14.5nC @ 4.5V, Rds On (Max) @ Id, Vgs: 48mOhm @ 5A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 1525pF @ 30V, Current - Continuous Drain (Id) @ 25°C: 26A (Tc), Technology: MOSFET (Metal Oxide).
Weitere Produktangebote DMPH6050SPD-13 nach Preis ab 0.63 EUR bis 2.59 EUR
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DMPH6050SPD-13 | Diodes Incorporated |
MOSFETs MOSFET BVDSS: 41V-60V |
auf Bestellung 21942 Stücke: Lieferzeit 10-14 Tag (e) |
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DMPH6050SPD-13 | Diodes Incorporated |
Description: MOSFET 2P-CH 26A POWERDI5060-8 Part Status: Active Supplier Device Package: PowerDI5060-8 Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 14.5nC @ 4.5V Rds On (Max) @ Id, Vgs: 48mOhm @ 5A, 10V Input Capacitance (Ciss) (Max) @ Vds: 1525pF @ 30V Current - Continuous Drain (Id) @ 25°C: 26A (Tc) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Qualification: AEC-Q101 Grade: Automotive Configuration: 2 P-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Cut Tape (CT) |
auf Bestellung 3098 Stücke: Lieferzeit 10-14 Tag (e) |
|
| DMPH6050SPD-13 |
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Hersteller: Diodes Incorporated
MOSFETs MOSFET BVDSS: 41V-60V
MOSFETs MOSFET BVDSS: 41V-60V
auf Bestellung 21942 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 2.43 EUR |
| 10+ | 1.56 EUR |
| 100+ | 1.05 EUR |
| 500+ | 0.84 EUR |
| 1000+ | 0.76 EUR |
| 2500+ | 0.65 EUR |
| 5000+ | 0.63 EUR |
| DMPH6050SPD-13 |
|
Hersteller: Diodes Incorporated
Description: MOSFET 2P-CH 26A POWERDI5060-8
Part Status: Active
Supplier Device Package: PowerDI5060-8
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 14.5nC @ 4.5V
Rds On (Max) @ Id, Vgs: 48mOhm @ 5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1525pF @ 30V
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Qualification: AEC-Q101
Grade: Automotive
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Description: MOSFET 2P-CH 26A POWERDI5060-8
Part Status: Active
Supplier Device Package: PowerDI5060-8
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 14.5nC @ 4.5V
Rds On (Max) @ Id, Vgs: 48mOhm @ 5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1525pF @ 30V
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Qualification: AEC-Q101
Grade: Automotive
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
auf Bestellung 3098 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 7+ | 2.59 EUR |
| 11+ | 1.62 EUR |
| 100+ | 1.05 EUR |
| 500+ | 0.83 EUR |
| 1000+ | 0.76 EUR |