DMS2085LSD-13 DIODES INC.
Hersteller: DIODES INC.
Description: DIODES INC. - DMS2085LSD-13 - Leistungs-MOSFET, p-Kanal, 20 V, 3.3 A, 0.07 ohm, SOIC, Oberflächenmontage
tariffCode: 85411000
Transistormontage: Oberflächenmontage
euEccn: NLR
Drain-Source-Spannung Vds: 20V
rohsCompliant: YES
Dauer-Drainstrom Id: 3.3A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: N
Gate-Source-Schwellenspannung, max.: 1.5V
Verlustleistung: 1.1W
SVHC: No SVHC (25-Jun-2025)
Bauform - Transistor: SOIC
Anzahl der Pins: 8Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: p-Kanal
Betriebstemperatur, max.: 150°C
Rds(on)-Prüfspannung: 10V
Drain-Source-Durchgangswiderstand: 0.07ohm
| Anzahl | Privatkunde |
|---|---|
| 280+ | 0.89 EUR |
| 400+ | 0.58 EUR |
| 585+ | 0.37 EUR |
| 770+ | 0.27 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details DMS2085LSD-13 DIODES INC.
Description: DIODES INC. - DMS2085LSD-13 - Leistungs-MOSFET, p-Kanal, 20 V, 3.3 A, 0.07 ohm, SOIC, Oberflächenmontage, tariffCode: 85411000, Transistormontage: Oberflächenmontage, euEccn: NLR, Drain-Source-Spannung Vds: 20V, rohsCompliant: YES, Dauer-Drainstrom Id: 3.3A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, isCanonical: N, Gate-Source-Schwellenspannung, max.: 1.5V, Verlustleistung: 1.1W, SVHC: No SVHC (25-Jun-2025), Bauform - Transistor: SOIC, Anzahl der Pins: 8Pin(s), Produktpalette: -, productTraceability: Yes-Date/Lot Code, usEccn: EAR99, Kanaltyp: p-Kanal, Betriebstemperatur, max.: 150°C, Rds(on)-Prüfspannung: 10V, Drain-Source-Durchgangswiderstand: 0.07ohm.
Weitere Produktangebote DMS2085LSD-13 nach Preis ab 0.18 EUR bis 1.08 EUR
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DMS2085LSD-13 | DIODES INC. |
Description: DIODES INC. - DMS2085LSD-13 - Leistungs-MOSFET, p-Kanal, 20 V, 3.3 A, 0.07 ohm, SOIC, Oberflächenmontage tariffCode: 85411000 Transistormontage: Oberflächenmontage euEccn: NLR Drain-Source-Spannung Vds: 20V rohsCompliant: YES Dauer-Drainstrom Id: 3.3A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: Y Gate-Source-Schwellenspannung, max.: 1.5V Verlustleistung: 1.1W SVHC: No SVHC (25-Jun-2025) Bauform - Transistor: SOIC Anzahl der Pins: 8Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code usEccn: EAR99 Kanaltyp: p-Kanal Betriebstemperatur, max.: 150°C Rds(on)-Prüfspannung: 10V Drain-Source-Durchgangswiderstand: 0.07ohm |
auf Bestellung 2465 Stücke: Lieferzeit 14-21 Tag (e) |
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DMS2085LSD-13 | Diodes Incorporated |
MOSFETs P-Ch Enh Fet w/Int Schottky -20Vbr 20Vr |
auf Bestellung 4175 Stücke: Lieferzeit 10-14 Tag (e) |
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DMS2085LSD-13 | Diodes Incorporated |
Description: MOSFET P-CH 20V 3.3A 8SO Input Capacitance (Ciss) (Max) @ Vds: 353 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 7.8 nC @ 10 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: 8-SO Vgs(th) (Max) @ Id: 2.2V @ 250µA Power Dissipation (Max): 1.1W (Ta) FET Feature: Schottky Diode (Isolated) Rds On (Max) @ Id, Vgs: 85mOhm @ 3.05A, 10V Current - Continuous Drain (Id) @ 25°C: 3.3A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) |
auf Bestellung 87500 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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DMS2085LSD-13 | Diodes Incorporated |
Description: MOSFET P-CH 20V 3.3A 8SO Input Capacitance (Ciss) (Max) @ Vds: 353 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 7.8 nC @ 10 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: 8-SO Vgs(th) (Max) @ Id: 2.2V @ 250µA Power Dissipation (Max): 1.1W (Ta) FET Feature: Schottky Diode (Isolated) Rds On (Max) @ Id, Vgs: 85mOhm @ 3.05A, 10V Current - Continuous Drain (Id) @ 25°C: 3.3A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) |
auf Bestellung 87500 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| DMS2085LSD-13 |
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Hersteller: DIODES INC.
Description: DIODES INC. - DMS2085LSD-13 - Leistungs-MOSFET, p-Kanal, 20 V, 3.3 A, 0.07 ohm, SOIC, Oberflächenmontage
tariffCode: 85411000
Transistormontage: Oberflächenmontage
euEccn: NLR
Drain-Source-Spannung Vds: 20V
rohsCompliant: YES
Dauer-Drainstrom Id: 3.3A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
Gate-Source-Schwellenspannung, max.: 1.5V
Verlustleistung: 1.1W
SVHC: No SVHC (25-Jun-2025)
Bauform - Transistor: SOIC
Anzahl der Pins: 8Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: p-Kanal
Betriebstemperatur, max.: 150°C
Rds(on)-Prüfspannung: 10V
Drain-Source-Durchgangswiderstand: 0.07ohm
Description: DIODES INC. - DMS2085LSD-13 - Leistungs-MOSFET, p-Kanal, 20 V, 3.3 A, 0.07 ohm, SOIC, Oberflächenmontage
tariffCode: 85411000
Transistormontage: Oberflächenmontage
euEccn: NLR
Drain-Source-Spannung Vds: 20V
rohsCompliant: YES
Dauer-Drainstrom Id: 3.3A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
Gate-Source-Schwellenspannung, max.: 1.5V
Verlustleistung: 1.1W
SVHC: No SVHC (25-Jun-2025)
Bauform - Transistor: SOIC
Anzahl der Pins: 8Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: p-Kanal
Betriebstemperatur, max.: 150°C
Rds(on)-Prüfspannung: 10V
Drain-Source-Durchgangswiderstand: 0.07ohm
auf Bestellung 2465 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 280+ | 0.89 EUR |
| 400+ | 0.58 EUR |
| 585+ | 0.37 EUR |
| 770+ | 0.27 EUR |
| DMS2085LSD-13 |
|
Hersteller: Diodes Incorporated
MOSFETs P-Ch Enh Fet w/Int Schottky -20Vbr 20Vr
MOSFETs P-Ch Enh Fet w/Int Schottky -20Vbr 20Vr
auf Bestellung 4175 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 1.08 EUR |
| 10+ | 0.67 EUR |
| 100+ | 0.42 EUR |
| 500+ | 0.32 EUR |
| 1000+ | 0.29 EUR |
| 2500+ | 0.24 EUR |
| 5000+ | 0.18 EUR |
| DMS2085LSD-13 |
|
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 20V 3.3A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 353 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 7.8 nC @ 10 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 1.1W (Ta)
FET Feature: Schottky Diode (Isolated)
Rds On (Max) @ Id, Vgs: 85mOhm @ 3.05A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.3A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Description: MOSFET P-CH 20V 3.3A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 353 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 7.8 nC @ 10 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 1.1W (Ta)
FET Feature: Schottky Diode (Isolated)
Rds On (Max) @ Id, Vgs: 85mOhm @ 3.05A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.3A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
auf Bestellung 87500 Stücke:
Lieferzeit 10-14 Tag (e)
| DMS2085LSD-13 |
|
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 20V 3.3A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 353 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 7.8 nC @ 10 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 1.1W (Ta)
FET Feature: Schottky Diode (Isolated)
Rds On (Max) @ Id, Vgs: 85mOhm @ 3.05A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.3A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Description: MOSFET P-CH 20V 3.3A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 353 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 7.8 nC @ 10 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 1.1W (Ta)
FET Feature: Schottky Diode (Isolated)
Rds On (Max) @ Id, Vgs: 85mOhm @ 3.05A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.3A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
auf Bestellung 87500 Stücke:
Lieferzeit 10-14 Tag (e)