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DMS3014SFGQ-7

DMS3014SFGQ-7 Diodes Incorporated


DMS3014SFGQ.pdf Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V 9.5A PWRDI3333-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta)
Rds On (Max) @ Id, Vgs: 14.5mOhm @ 10.4A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PowerDI3333-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 19.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4310 pF @ 15 V
auf Bestellung 10000 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
2000+0.45 EUR
Mindestbestellmenge: 2000
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Technische Details DMS3014SFGQ-7 Diodes Incorporated

Description: MOSFET N-CH 30V 9.5A PWRDI3333-8, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta), Rds On (Max) @ Id, Vgs: 14.5mOhm @ 10.4A, 10V, Power Dissipation (Max): 1W (Ta), Vgs(th) (Max) @ Id: 2.2V @ 250µA, Supplier Device Package: PowerDI3333-8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 19.3 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4310 pF @ 15 V.

Weitere Produktangebote DMS3014SFGQ-7 nach Preis ab 0.49 EUR bis 1.16 EUR

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DMS3014SFGQ-7 DMS3014SFGQ-7 Hersteller : Diodes Incorporated DMS3014SFGQ.pdf Description: MOSFET N-CH 30V 9.5A PWRDI3333-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta)
Rds On (Max) @ Id, Vgs: 14.5mOhm @ 10.4A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PowerDI3333-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 19.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4310 pF @ 15 V
auf Bestellung 11708 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
16+1.16 EUR
18+1.01 EUR
100+0.78 EUR
500+0.61 EUR
1000+0.49 EUR
Mindestbestellmenge: 16
Im Einkaufswagen  Stück im Wert von  UAH
DMS3014SFGQ-7 Hersteller : DIODES INCORPORATED DMS3014SFGQ.pdf DMS3014SFGQ-7 SMD N channel transistors
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DMS3014SFGQ-7 DMS3014SFGQ-7 Hersteller : Diodes Incorporated DIOD_S_A0004145119_1-2542416.pdf MOSFET MOSFET BVDSS: 25V-30V
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