DMT10H010LSSQ-13 Diodes Incorporated

Description: MOSFET BVDSS: 61V~100V SO-8 T&R, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 12A (Ta), Rds On (Max) @ Id, Vgs: 9.5mOhm @ 13A, 10V, Power Dissipation (Max): 1.9W (Ta), Vgs(th) (Max) @ Id: 2.8V @ 250µA, Supplier Device Package: 8-SO, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 58.4 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4166 pF @ 50 V, Qualification: AEC-Q101.