DMT10H025LSS-13 Diodes Incorporated

Description: MOSFET BVDSS: 61V~100V SO-8 T&R, Input Capacitance (Ciss) (Max) @ Vds: 1639 pF @ 50 V, Gate Charge (Qg) (Max) @ Vgs: 22.9 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: 8-SO, Vgs(th) (Max) @ Id: 3V @ 250µA, Power Dissipation (Max): 1.3W (Ta), 12.9W (Tc), Rds On (Max) @ Id, Vgs: 25mOhm @ 20A, 10V, Current - Continuous Drain (Id) @ 25°C: 7.1A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Tape & Reel (TR).