DMT10H052LFDF-7 Diodes Incorporated

Description: MOSFET BVDSS: 61V~100V U-DFN2020, Input Capacitance (Ciss) (Max) @ Vds: 258 pF @ 50 V, Gate Charge (Qg) (Max) @ Vgs: 5.4 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: U-DFN2020-6 (Type F), Vgs(th) (Max) @ Id: 3V @ 250µA, Power Dissipation (Max): 800mW (Ta), Rds On (Max) @ Id, Vgs: 52mOhm @ 4A, 10V, Current - Continuous Drain (Id) @ 25°C: 5A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 6-UDFN Exposed Pad, Packaging: Tape & Reel (TR).